2006
DOI: 10.1016/j.jcrysgro.2005.10.056
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Structures and properties of (Zn,Mg)O films studied from the aspect of phase equilibria

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Cited by 51 publications
(55 citation statements)
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“…Due to their similar crystal structure and very similar lattice parameters, the peaks due to ZnO and Mg 0.1 Zn 0.9 O could not be identified separately. 30,31 The resistivity and carrier concentration values of the ZnO thin film in the present study have been found to be 132 Xcm and $1 · 10 17 cm -3 , respectively. On the other hand, the resistivity of the Mg 0.1 Zn 0.9 O film is very high and could not be measured due to instrumental limitations.…”
Section: Methodssupporting
confidence: 53%
“…Due to their similar crystal structure and very similar lattice parameters, the peaks due to ZnO and Mg 0.1 Zn 0.9 O could not be identified separately. 30,31 The resistivity and carrier concentration values of the ZnO thin film in the present study have been found to be 132 Xcm and $1 · 10 17 cm -3 , respectively. On the other hand, the resistivity of the Mg 0.1 Zn 0.9 O film is very high and could not be measured due to instrumental limitations.…”
Section: Methodssupporting
confidence: 53%
“…The substitution limit was found to be different for different techniques which are about 33% for PLD [14], 49% for molecular beam epitaxy (MBE) [15], and metalorganic vapor phase epitaxy (MOVPE) [16]. Ohtomo et al [17] have found that the thermodynamically MgO is soluble in Mg x Zn 1Àx O up to a value of x = 0.15, while recently Ryoken et al [18] reported the value to be in the composition range 0.12 < x < 0.18. There are very few studies on the sol-gel Mg x Zn 1Àx O O thin films where substitution up to 20%, 33%, and 36% were reported [19][20][21].…”
Section: Introductionmentioning
confidence: 99%
“…For instance, (Zn 1¹x Mg x )O alloy with x μ 0.5 can be obtained by physical deposition, e.g., pulsed laser deposition, but the solubility limit of MgO in the ZnO lattice is approximately x = 0.15 at around 1000°C. 44) For investigations of the fundamental properties of ZnO, we need to find the material parameters under thermal equilibrium. In this respect, the developed bulk crystal growth methods have been very useful.…”
Section: Doped Znomentioning
confidence: 99%