Structures and physical properties of sputtered amorphous SiC films

Matsunami, Hiroyuki; Hagio, M.; Tanaka, Tetsuro

doi:10.1007/bf02655626

Cited by 17 publications

(11 citation statements)

References 9 publications

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“…In Fig. 3 we compare our data with data from the literature selected as mentioned above; data include Fagen [14], Matsunami et al [15], Dutta et al [16], Heckens and Woollam [17], Sundaram et al [18], and Guerra et al [19]; most data include only k. There is a large dispersion of k data. Only the Heckens k data match the present one; the match of the Heckens data in n is not as good as in k, but the differences are not very large.…”

Section: Resultsmentioning

confidence: 99%

“…As an amorphous semiconductor, SiC film optical-constant data could be fitted in principle with a Tauc-Lorentz model [26]. However, that model assumes no absorption in the range below the bandgap of the material, which for SiC is expected to be in the ∼1:6 to 2:0 eV range [14,15,18] (Ref. [15] was obtained for samples deposited at 373 K).…”

Section: Resultsmentioning

confidence: 99%

“…However, that model assumes no absorption in the range below the bandgap of the material, which for SiC is expected to be in the ∼1:6 to 2:0 eV range [14,15,18] (Ref. [15] was obtained for samples deposited at 373 K). But of course material absorption is not zero at energies just below the bandgap, so that the Tauc-Lorentz model is not useful to describe this range.…”

Section: Resultsmentioning

confidence: 99%

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Self-consistent optical constants of SiC thin films

et al. 2011

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The optical constants of ion-beam-sputtered SiC films have been measured by ellipsometry in the 190 to 950 nm range. The set of data has been extended both toward shorter and longer wavelengths with data in the literature, along with inter- and extrapolations, in order to obtain a self-consistent set of data by means of Kramers-Krönig analysis. All data correspond to films that were deposited by sputtering on nonheated substrates, and hence they are expected to be amorphous. A bandgap of 1.9 eV for the films was fitted from the obtained optical constants. A good global accuracy of the data was estimated through the use of various sum rules. The consistent dataset includes the visible to the extreme ultraviolet (EUV); this large spectrum of characterization will enable the design of multilayer coatings that combine a high reflectance in parts of the EUV with desired performance at a secondary range, such as the visible. To our knowledge, this paper provides the first compilation of the optical constants of amorphous SiC films.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Self-consistent optical constants of SiC thin films

et al. 2011

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“…Fagen [134] publicó medidas de reflectancia y el coeficiente de absorción en el intervalo 0.08-4 eV (309.7-15487.5 nm). Matsunami et al [135] publicaron medidas de reflectancia y el coeficiente de absorción en el intervalo 1.2-3.2 eV (387.2-1032.5 nm); estos autores depositaron las láminas sobre substratos a 100°C. Dutta et al [136] obtuvieron la absorción de los compuestos Si x C x F y , dependiendo de la concentración de F, incluyendo el SiC, en el intervalo 1.6-2.4 eV (516.2-774.4 nm).…”

Section: Sicunclassified

“…En el caso del SiC, este trabajo ha sido el primero en proporcionar un conjunto de n y k en el intervalo 190-300 nm. En la figura 4.12 se muestran las constantes ópticas obtenidas en este trabajo junto con los datos de Fagen [134], Matsunami et al [135], Dutta et al [136], Heckens y Woollam [137], Sundaram et al [138] y Guerra et al [139]. Todos ellos usaron la técnica de deposición por sputtering.…”

Section: Obtención De Constantes óPticasunclassified