Abstract:As we continue to scale the dimensions of transistors and wires in the deep submicron (DSM) era, the resolution of photolithographic processes is quickly reaching its limits and causing problems in the reliable manufacture of integrated circuits. The design methods using standard cell ASICs (SC-ASIC) produce randomly placed gates and interconnects which are difficult to fabricate at fine geometries, such as 65nm and below. Besides reduced yield, they also suffer from high testing cost, even with the most advan… Show more
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