1995
DOI: 10.4028/www.scientific.net/msf.196-201.237
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Structure of the 0.95 eV Photoluminescence Centers in n-Type GaAs

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Cited by 11 publications
(10 citation statements)
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“…Beyond an electron concentration of about 1 Â 10 18 cm À3 the former one vanishes completely. In contradiction to the results published so far [17][18][19][20][21], we assign the 0.95 eV band to the (V Ga Si Ga ) 2À and the 1.15 eV transition to the (Si Ga V Ga Si Ga ) À complex. Detailed arguments will be published elsewhere [34].…”
Section: Si-doped Gaas Grown From Stoichiometric Meltscontrasting
confidence: 80%
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“…Beyond an electron concentration of about 1 Â 10 18 cm À3 the former one vanishes completely. In contradiction to the results published so far [17][18][19][20][21], we assign the 0.95 eV band to the (V Ga Si Ga ) 2À and the 1.15 eV transition to the (Si Ga V Ga Si Ga ) À complex. Detailed arguments will be published elsewhere [34].…”
Section: Si-doped Gaas Grown From Stoichiometric Meltscontrasting
confidence: 80%
“…Studies on the influence of boron on vacancy concentrations show that boron decreases the concentration of Ga vacancies (V Ga ) [15,16]. Isolated vacancies form (donor-V Ga ) complexes due to Coulomb interaction and its concentration relates to the intensity of luminescence bands at 0.95 and 1.15 eV [17][18][19][20][21]. In this study, we present experimental data on the dependence of the formation of these compensating (donor-V Ga ) complexes on Si doping.…”
Section: Introductionmentioning
confidence: 96%
“…It is also well known [7,8,11,13,17,18] that the donor-VGa complex shows a Franck-Condon spectral shift of absorption away from luminescence, because VGa is highly coupled to the lattice. (Arrows a and b in Figure 6a show luminescence and absorption at the same energies.…”
Section: Photoluminescence and Electroluminescence Studiesmentioning
confidence: 99%
“…Though these deep-acceptors have been known since the 1960s [ 8 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ], this material is novel because n-type GaAs is not usually designed to retain large concentrations of compensating acceptors. These compensating acceptors are [ 8 , 11 , 19 , 20 , 21 , 22 , 23 ] donor-vacancy-on-gallium complexes (donor-V complexes, e.g., V , Si -V , Si -V -Si , etc., where Si denotes the silicon-on-gallium-site).…”
Section: Photoluminescence and Electroluminescence Studiesmentioning
confidence: 99%
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