“…Though these deep-acceptors have been known since the 1960s [ 8 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ], this material is novel because n-type GaAs is not usually designed to retain large concentrations of compensating acceptors. These compensating acceptors are [ 8 , 11 , 19 , 20 , 21 , 22 , 23 ] donor-vacancy-on-gallium complexes (donor-V complexes, e.g., V , Si -V , Si -V -Si , etc., where Si denotes the silicon-on-gallium-site).…”