Structure of non-stoichiometric Sr–Bi–Nb–O thin films grown by PLD

Duclère, Jean‐René; Перрин, А.; Guilloux-Viry, M.; Olikhovska, L.; Ustinov, А.I.

doi:10.1016/j.jcrysgro.2004.11.383

Cited by 3 publications

(4 citation statements)

References 26 publications

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“…In the example of SBN, the Bi under-stoichiometry results, when the film is epitaxially grown on a well-matched substrate like (100)SrTiO 3 , in the epitaxial intergrowth of two phases corresponding to the terms m ¼ 2 and m ¼ 3 in the Aurivillius general formula, as clearly evidenced by X-ray diffraction analysis and modeling [101], RBS channeling measurements and XPD [102] as well as direct observation by transmission electron microscopy on cross sections [103]. Indeed, the m ¼ 3 term does not exists in the bulk, as mentioned above, and is stabilized only when sandwiched between two m ¼ 2 layers.…”

Section: Control Of Compositionmentioning

confidence: 94%

Epitaxially grown ferroelectric thin films for agile devices

Перрин¹,

Rousseau²,

Fasquelle³

et al. 2008

Phase Transitions

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Section: Control Of Compositionmentioning

confidence: 94%

Epitaxially grown ferroelectric thin films for agile devices

Перрин¹,

Rousseau²,

Fasquelle³

et al. 2008

Phase Transitions

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“…As mentioned above, quite a few observations bear witness to a nonrandom disorder of the structure. In addition, the density of the SFs is not low in a number of cases (Duclè re et al, 2005;Guilmeau et al, 2005). The assumption of a constant value of the c lattice parameter should be taken with caution, because various authors report different c values for the same material (Brazdeikis et al, 1995;Budin et al, 1993;Michel et al, 1987;Onoda et al, 1988;Rubin et al, 1994;Tarascon et al, 1988).…”

Section: Introductionmentioning

confidence: 99%

“…Efforts have been made to develop an approach that would allow a characterization of the type and density of SFs using X-ray diffraction (XRD) techniques (Boulle et al, 2001;Brazdeikis et al, 1995;Duclè re et al, 2005;Onoda et al, 1988;Tarascon et al, 1988;Ranno et al, 1993;Rud' & Ustinov, 1996;Vailionis et al, 1995). These approaches were grounded on the following main assumptions.…”

Section: Introductionmentioning

confidence: 99%

Diffraction analysis of perovskite-like oxides containing irregular intergrowths

Olikhovska¹,

Ustinov²

2008

J Appl Cryst

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Features of the X-ray intensity distributions caused by the presence of random and nonrandom stacking faults (irregular intergrowths) in layered perovskitelike oxides are studied by a computer simulation technique. It is shown that, apart from the stacking fault properties, the position, profile and intensity of a diffraction peak are dependent on the ratio between the c lattice parameter of the crystal and the thickness of the new structural fragment formed as a result of the stacking fault. A means of characterizing the stacking faults on the basis of the relative positions of pairs of diffraction peaks is presented. The approach is exemplified by the X-ray diffraction study of a disordered single crystal of the system Bi-Sr-Ca-Cu-O.

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“…Stacking faults are widely known to have considerable effect on the diffraction patterns. Contrary to where each main (strongest) diffraction peak is in the same position as the corresponded Bragg reflection of the basic structure [1], the occurrence of the stacking faults affects diffraction-peak positions of the basic structure [5][6][7][8][9]. It is true for an ordered as well.…”

Section: Introductionmentioning

confidence: 99%

A New Diffraction Approach To Crystal Structure Determination of Nano-twined Martensites

Olikhovska

Ustinov

Glavatska

et al. 2009

ESOMAT 2009 - 8th European Symposium on Martensitic Transformations

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Abstract. The intensity diffracted by crystals containing twin boundaries of the system {110}, 0 1 1 were calculated in the reciprocal space assuming a short-range order in the twin-boundary distribution. The calculated intensity distributions have been analyzed to find the effect on the diffraction pattern of such parameters as (i) ratio b/a (c/a) between the crystal lattice constants, (ii) density of the twin boundaries, (iii) ratio between thicknesses of the twin-related lamellae, and (iv) crystallographic direction along which the intensity distribution is simulated. It is found that each of these parameters affects the diffraction-peak profiles and positions including the diffraction peaks of the basic structure. Therefore, the problem of the diffraction pattern identification for a twin-modulated crystal should be approached only by a combined consideration of the diffraction features.

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Structure of non-stoichiometric Sr–Bi–Nb–O thin films grown by PLD

Cited by 3 publications

References 26 publications

Epitaxially grown ferroelectric thin films for agile devices

Epitaxially grown ferroelectric thin films for agile devices

Diffraction analysis of perovskite-like oxides containing irregular intergrowths

A New Diffraction Approach To Crystal Structure Determination of Nano-twined Martensites

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