Structure of MnSi on SiC(0001)

Meynell, S. A.; Spitzig, Alyson; Edwards, Bruce H.; Robertson, M.; Kalliecharan, David; Kreplak, Laurent; Monchesky, T. L.

doi:10.1103/physrevb.94.184416

Cited by 5 publications

(1 citation statement)

References 41 publications

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“…Although the lattice constants of our MnxFe1-xGe films are larger than the corresponding lattice spacing of the silicon substrate (5.4313/2=4.703 Å) for x > 0.17 our films consistently have lateral expansion and perpendicular compression, regardless of x. This suggests that the strain deformation in the cubic B20 crystalline thin films is most likely due to the mismatch in the thermal expansion coefficient between the film and Si, rather than the direct room temperature lattice mismatch [23]. Nevertheless, we find that by growing MnxFe1-xGe thin films using MBE, we are able to reduce the strain by a factor of four as compared to the strain in sputtered B20 FeGe thin films [16].…”

Section: Growth and Physical Characterizationmentioning

confidence: 68%

Engineering Dzyaloshinskii-Moriya interaction in B20 thin-film chiral magnets

Turgut

Paik

Nguyen

et al. 2018

Phys. Rev. Materials

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Chiral magnetic MnxFe1-xGe compounds have an antisymmetric exchange interaction that is tunable with the manganese stoichiometric fraction, x. Although millimeter-scale, polycrystalline bulk samples of this family of compounds have been produced, thin-film versions of these materials will be necessary for devices. In this study, we demonstrate the growth of epitaxial MnxFe1-xGe thin films on Si (111) substrates with a pure B20 crystal structure in the stoichiometric fraction range x from 0 to 0.81. Following systematic physical and magnetic characterization including microwave absorption spectroscopy, we quantify the antisymmetric exchange interaction and helical period as a function of x, which ranges from 200 nm to 8 nm.Our results demonstrate an approach to engineering the size of magnetic skyrmions in epitaxial films that are grown using scalable techniques.I.

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Section: Growth and Physical Characterizationmentioning

confidence: 68%

Engineering Dzyaloshinskii-Moriya interaction in B20 thin-film chiral magnets

Turgut

Paik

Nguyen

et al. 2018

Phys. Rev. Materials

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Solid-state dewetting of Au–Ni bi-layer films mediated through individual layer thickness and stacking sequence

Herz

Theska

Rossberg

et al. 2018

Applied Surface Science

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Twin domains in epitaxial thin MnSi layers on Si(111)

Trabel

Tarakina

Pohl

et al. 2017

Journal of Applied Physics

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Thin layers of MnSi, the first discovered host material of a skyrmion lattice, are epitaxially grown on Si(111) and their crystal properties are investigated by X-ray diffraction and transmission electron microscopy (TEM) measurements. Azimuthal ϕ -scans of asymmetric X-ray reflections reveal the formation of twinned domains with their unit cell rotated ±30° in plane with respect to the Si unit cell. The intensities of corresponding reflections indicate the same volume fractions for both domain types. Cross-sectional TEM confirms the presence of these domains and reveals a typical domain size of about 200 nm.

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Structure of MnSi on SiC(0001)

Cited by 5 publications

References 41 publications

Engineering Dzyaloshinskii-Moriya interaction in B20 thin-film chiral magnets

Engineering Dzyaloshinskii-Moriya interaction in B20 thin-film chiral magnets

Solid-state dewetting of Au–Ni bi-layer films mediated through individual layer thickness and stacking sequence

Twin domains in epitaxial thin MnSi layers on Si(111)

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