Structure of Ge epilayers on Si{100}

Wang, Y.; Bu, H.; Lytle, T.E.; Rabalais, J. W.

doi:10.1016/0039-6028(94)90343-3

Cited by 7 publications

(4 citation statements)

References 23 publications

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“…The same authors observed a diffuse 2 × 1 LEED pattern even after 4 to 6 ML of Ge, which has been attributed to an ordered 2 ML Ge overlayer . In contrast, in our case, no order could be observed after 2 ML, leading us to postulate a rather amorphously developing Ge overlayer, in accordance with previous works . The layered growth mode at RT is also supported by previous X‐ray photoelectron and Auger electron measurements, as well as transmission electron microscopy …”

Section: Resultssupporting

confidence: 92%

“…Postulating that Ge interacts with Si through dangling bonds, we propose an adsorption model based on the formation of Ge dimers, as those depicted in Figure . The dimerization of the Ge epilayer for coverages from less than to more than 1 ML has been confirmed previously for elevated growth temperatures 650 o C and 850°C to 920°C . Although the calculated coverage of this model is 0.25 ML, to be consistent with the estimated 1.2 ML from the AES measurements, we must take into account almost 1 ML of extra Ge coverage, which does not contribute to the (4 × 4) R 45 o symmetry.…”

Section: Resultssupporting

confidence: 82%

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Ultrathin films of Ge on the Si(100)2 × 1 surface

Kamaratos

Sotiropoulos

Vlachos

2017

Surface & Interface Analysis

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The Ge/Si(100)2 × 1 interface was investigated by means of Auger electron spectroscopy, lowenergy electron diffraction, thermal desorption spectroscopy, and work function measurements, in the regime of a few monolayers. The results show that growth of Ge at room temperature forms a thermally stable amorphous interface without significant intermixing and interdiffusion into the substrate, for annealing up to~1100 K. Therefore, the Ge-Si interaction most likely takes place at the outmost silicon atomic plane. The charge transfer between Ge and Si seems to be negligible, indicating a rather covalent bonding. Regarding the Ge overlayer morphology, the growth mode depends on the substrate temperature during deposition, in accordance with the literature. Stronger annealing of the germanium covered substrate (>1100 K) causes desorption of not only Ge adatoms, but also SiGe and Ge 2 species. This is probably due to a thermal Ge-Si interdiffusion. In that case, deeper silicon planes participate in the Ge-Si interaction. Above 1200 K, a new Ge superstructure (4 × 4)R45 o was observed. Based on that symmetry, an atomic model is proposed, where Ge adatom pairs interact with free silicon dangling bonds.

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Section: Resultssupporting

confidence: 92%

Section: Resultssupporting

confidence: 82%

Ultrathin films of Ge on the Si(100)2 × 1 surface

Kamaratos

Sotiropoulos

Vlachos

2017

Surface & Interface Analysis

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“…Different results have been reported for the geometry of the dimers on the Ge/Si(100)-2 × 1 surface. Theory predicted the Ge−Ge homodimer bond lengths between 2.38 and 2.51 Å and buckling angles from 12.7° to 20.4°. − On the other hand, experiments using various techniques obtained Ge−Ge bond lengths of 2.40−2.60 Å and buckling angles from 0° to 17.8°. − In general, theoretical calculations predict shorter Ge−Ge bond lengths than experimental measurements. There are fewer studies on the geometry of the Ge−Si heterodimer on the Ge/Si(100)-2 × 1 surface.…”

Section: Introductionmentioning

confidence: 99%

“…[12][13][14][15][16][17][18][19] On the other hand, experiments using various techniques obtained Ge-Ge bond lengths of 2.40-2.60 Å and buckling angles from 0°to 17.8°. [20][21][22][23][24][25][26][27][28][29][30] In general, theoretical calculations predict shorter Ge-Ge bond lengths than experimental measurements. There are fewer studies on the geometry of the Ge-Si heterodimer on the Ge/Si(100)-2 × 1 surface.…”

Section: Introductionmentioning

confidence: 99%

A Theoretical Study of the Structure and Thermochemistry of 1,3-Butadiene on the Ge/Si(100)-2 × 1 Surface

1999

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We present an ab initio investigation of the structure and thermochemistry of the products of the chemisorption of 1,3-butadiene on the Ge/Si(100)-2 × 1 surface. The surface was modeled using a Si cluster with one dimer and Ge substitution for surface Si to study the effects of Ge on the cycloaddition. Calculations were performed using the Becke3LYP hybrid density functional theory method. Both the [4 + 2] Diels-Alder and the [2 + 2] cycloaddition products are energetically stable on all the Ge/Si(100)-2 × 1 surfaces investigated. The [4 + 2] Diels-Alder products on the Si-Si, Si-Ge, and Ge-Ge dimers are more stable than the corresponding [2 + 2] cycloaddition product due to ring strain. The binding energies of all cycloaddition reaction products decrease with increasing Ge composition on dimers, which can be explained by differences in bond strength. The structures and energetics will be explained and discussed.

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Kinetics of hydrogen desorption from germanium-covered Si(100)

Russell

Ekerdt

1996

Surface Science

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Structure of Ge epilayers on Si{100}

Cited by 7 publications

References 23 publications

Ultrathin films of Ge on the Si(100)2 × 1 surface

Ultrathin films of Ge on the Si(100)2 × 1 surface

A Theoretical Study of the Structure and Thermochemistry of 1,3-Butadiene on the Ge/Si(100)-2 × 1 Surface

Kinetics of hydrogen desorption from germanium-covered Si(100)

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