1992
DOI: 10.1016/0956-7151(92)90272-g
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Structure of AlAl and AlSi3N4 interfaces bonded at room temperature by means of the surface activation method

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Cited by 208 publications
(78 citation statements)
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“…Al foils and Si wafaers. 4,5) The other technique is smoothing the faying surface. Low surface roughness increases the bonded area and improves the strength of the bond accordingly.…”
Section: Introductionmentioning
confidence: 99%
“…Al foils and Si wafaers. 4,5) The other technique is smoothing the faying surface. Low surface roughness increases the bonded area and improves the strength of the bond accordingly.…”
Section: Introductionmentioning
confidence: 99%
“…Ion bombardment as a surface treatment of the bonding surface is considered to be an effective method. It has been reported that it is possible to make micro-bonding of similar and dissimilar materials, such as Si/Si, 8) Al/Al, 13,14) and Al/Si 3 N 4 , 14) at a room temperature after the argon ion bombardment treatment. However, it is not clear about the effect of ion bombardment treatment for the diffusion bonding of various metals yet.…”
Section: Introductionmentioning
confidence: 99%
“…In the previous investigations, various metals and their alloys as well as the combinations to some ceramics and semiconductors have been bonded at room temperature in high vacuum. [8][9][10][11] The bonding of SnAg-Cu bumps has also achieved in ambient air and be found critical to air exposure time.…”
Section: Introductionmentioning
confidence: 99%
“…7) SAB method is based on the very strong metal or covalent bonding energy between two atomic clean surfaces. 8) The clean surfaces can be obtained by performing dry process such as argon fast atom beam or ion beam in high vacuum. In the previous investigations, various metals and their alloys as well as the combinations to some ceramics and semiconductors have been bonded at room temperature in high vacuum.…”
Section: Introductionmentioning
confidence: 99%