Structure of 600 V IC and a new voltage sensing device

Terashima, Toshio; Yoshizawa, Michio; Fukunaga, M.; Majumdar, G.

doi:10.1109/ispsd.1993.297076

Cited by 13 publications

(12 citation statements)

References 5 publications

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“…Such capabilities of HVICs make them an ideal choice for integration in IPMs to create advanced power modules. Presently, HVIC processes of 600 V and 1200 V classes have been developed [6]. High voltage ASICs generated by these processes are applied in the transfer-molded package type DIP-IPM series rated up to 50A and 1200V.…”

Section: Hvicmentioning

confidence: 99%

Trends of intelligent power module

Majumdar

Fukunaga

Ise

2007

IEEJ Transactions Elec Engng

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The state-of-the-art Intelligent Power Modules (IPMs) have been reviewed in the beginning of this paper along with a brief overview of its history and the purpose of its development. In the following part, the paper reviews the key IPM concept and the technologies that supported its evolution as a major power electronics component family so far. The paper will also highlight on the status and future possibilities of IPM based power semiconductors for far future power conversion applications. 

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Section: Hvicmentioning

confidence: 99%

Trends of intelligent power module

Majumdar

Fukunaga

Ise

2007

IEEJ Transactions Elec Engng

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“…This HVIC is fabricated by 600V Bi-CMOS-DMOS wafer process. The HVIC includes NPN transistor, PNP transistor, n-ch MOS transistor, p-ch MOS transistor, high voltage n-ch DMOS and high voltage p-ch DMOS that is used for reverse level shifting function [7]. The newest design rule of 600V HVIC is 1 .3 im.…”

Section: Power Chip Technologymentioning

confidence: 99%

Integration of power devices-next tasks

Araki

2005

2005 European Conference on Power Electronics and Applications

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This paper presents new power chip concepts such as Reverse Conducting IGBT (RC-IGBT), which are integrated IGBT with Diode and Reverse Blocking IGBT (RB-IJGBT). The RC-IJGBT will have a big impact for conventional Power Modules. Because, by using RC-IGBT, we can save resources such as Silicon Chip (including material itself and production energy) and also save Packaging Materials.By using RB-IGBT, we will able to make new Power Control Systems such as AC Matrix Converter and thus eliminate the large DC link Capacitor.High Voltage IC (HVIC) is used already as simple gate drive circuit in low power area. By using HVIC, a single gate power supply is enough for driving all 6 inverter switches. This paper presents newest HVIC concept and structure. We are developing new module packaging concepts having a new thermal dissipation structure and using transfer-molded package. This allows us to reduce package size and weight. Consequently our newest package will save resources of packaging and logistics and energy of transport.The newest Power Module, whose key concept is called "Environmental Compatibility", will be a combination of RC-IGBT (or RB-IGBT), HVIC and new packaging technologies in order to save resources. The Key Word "Environmental Compatibility" is indicating our new Power Device's Direction.

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“…So the 600V SPIC can be used in high efficient electric ballast and motor drive widely. And many researching works have been done in this aspect [1][2][3][4]. A typical use of SPIC is the high efficient electric ballast [1] whose diagram is shown in Fig.l, which has APFC (Active Power Factor Correction) circuit.…”

Section: Introductionmentioning

confidence: 99%

A novel over-voltage protection method for 600V SPIC

Han

2002

J. of Electron.(China)

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A novel over-voltage protection method for 600V SPIC (Smart Power IC) is proposed in this paper. The combining FFLRs (Floating Field Limiting Rings) system is designed to be a voltage detector. The detector's voltage can turn off the switch of the APFC (Active Power Factor Correction) circuit and the bus voltage would fall from 600VDC to 300VDC, so the SPIC and power devices can be protected. The advantages of this design are that the total protection circuits are integrated in SPIC and technologically compatible with CMOS or BCD(Bipolar-CMOS-DMOS) technology.

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Structure of 600 V IC and a new voltage sensing device

Cited by 13 publications

References 5 publications

Trends of intelligent power module

Trends of intelligent power module

Integration of power devices-next tasks

A novel over-voltage protection method for 600V SPIC

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