Structure Dependence of Magnetic Properties of Fe-Al-Si (Sendust) Alloy Films

This article describes a method of thermally processing sputter deposited 2-μm-thick sendust films to produce the high permeability form of this alloy. The method described utilizes rapid thermal processing to induce the phase change in the sendust from the disordered α type to the DO3 ordered structure as confirmed by Mössbauer spectroscopy. Optimization of the treatment resulted in films with a coercivity of less than 0.4 Oe. At a treatment temperature of 500 °C, a soak time of 120 s was required to achieve optimum coercivity and at a temperature of 600 °C a time of 15 s was required. Treatments at the lower end of the temperature range with longer process times gave a greater degree of reproducibility in the coercivity results. This thermal treatment gives rise to several performance advantages of the material relative to untreated sendust, including reduced “out-of-plane” magnetic component, improved high frequency permeability, and surface passivation. In addition, the processing times associated with rapid thermal processing are considerably less than for conventional annealing, making this an attractive production solution for magnetoresistive shielding applications.

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Tunnel magnetoresistance in magnetic tunnel junctions with FeAlSi electrode

Akamatsu

Oogane

Jin

et al. 2021

AIP Advances

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(001)-oriented FeAlSi polycrystalline thin films with a flat surface and B2-ordered structure were grown on thermally oxidized SiO2 substrates using MgO buffer layers. The FeAlSi thin films composition-adjusted to the Sendust alloy exhibited a low coercivity (Hc) after the annealing process. We utilized these films as bottom electrodes of magnetic tunnel junctions (MTJs) and characterized their tunnel magnetoresistance (TMR) effect. The TMR effect was 35.9% at room temperature. In addition, the TMR ratio increased to 51.0% when a thin CoFeB layer was inserted into the FeAlSi/MgO interface, without degrading the small switching field of the FeAlSi electrode. These MTJs with a small switching field and relatively high TMR ratio using the FeAlSi electrode are promising for highly sensitive MTJ-based magnetic sensor devices.

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Structure Dependence of Magnetic Properties of Fe-Al-Si (Sendust) Alloy Films

Cited by 8 publications

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Mössbauer study on structural changes in sputtered Fe-Al-Si thin films

Mössbauer study on structural changes in sputtered Fe-Al-Si thin films

Rapid thermal processing of sendust for magnetic recording applications

Tunnel magnetoresistance in magnetic tunnel junctions with FeAlSi electrode

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