Structure control of pulsed-laser-deposited Pb_0.6Sr_0.4TiO₃/La_0.5Sr_0.5CoO₃thin films on various substrates

Dielectric and Structural Properties of PST Films Deposited by RF Ion Sputtering on LSCO/Si Substrates

“…Low polarization values were found for Downloaded by [Anadolu University] at 06:35 26 December 2014 the PST films on LSCO/Si (Fig. 4b) when compared with results obtained by other authors using different techniques [10][11][12]. However, this result is important because there are no other reports for PST films grown by RF ion sputtering.…”

“…The purpose of the present work is therefore, to grow ferroelectric Pb x Sr 1−x TiO 3 thin films on LSCO/Si substrates by RF ion sputtering and to study how the structure and properties of the films would be affected by this kind of substrate. Some recent efforts have been directed toward growing Pb x Sr 1−x TiO 3 films with other techniques [9,10,12,13] in the search of good alternative for applications.…”

Effects of accumulated laser pulses on (Pb,Sr)TiO3 films post-excimer laser annealed at low temperatures

“…6 shows the GIXRD pattern of PSrT films unirradiated and post-ELA with various numbers of laser pulses. The diffraction peaks are indexed as (1 0 0), (1 1 0), (2 0 0) and (2 1 1) planes of (Pb 1Àx Sr x )TiO 3 perovskite structure [2][3][4][5][6]19]. The intensity of (2 0 0) orientation is composed of (2 0 0) PSrT and (2 0 0) Pt peaks.…”

“…(Pb,Sr)TiO 3 (PSrT) is one of the feasible ferroelectric materials for memory, sensor, frequency tuning devices and microwave applications because of its large electric-field-dependent dielectric constant and composition-dependent Curie temperature [2][3][4][5][6][7]. The PSrT film is constituted by a solid solution of PbTiO 3 (PTO) and SrTiO 3 (STO).…”

Structural and Electrical Investigations of Pulse-Laser-Deposited (Pb,Sr)TiO[sub 3] Films at Various Oxygen Partial Pressures

“…1,2 Therefore, PSrT is suitable for memory, sensor, frequency tuning devices, and microwave applications due to its large electric-field-dependent dielectric constant and composition-dependent Curie temperature. [1][2][3][4][5][6] In this work, ͑Pb,Sr͒TiO 3 films were prepared using pulsed-laser deposition ͑PLD͒, which is simple, versatile, and capable of growing a wide variety of stoichiometric oxide films without subsequent hightemperature annealing and is excellent for fabricating ceramic films with complex compounds. Hence, PLD is a potential technique which could be integrated into low-temperature semiconductor processing to suppress the formerly deposited underlayers from damage and eliminate the volatilization of PbO in lead-titanate-based thin films, which always degrades the crystallinity of perovskite phases and electric properties of ferroelectric devices.…”