Structure characterization of Fe films grown on GaAs (100) by ion-beam sputter epitaxy

Magnetic Properties of Fe(001) Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering

“…The FWHM line width Δθ 50 was 1.7° for Fe(002) plane, and Δθχ 50 = 1.8° for Fe(220) plane. The observed width is larger than those reported previously for dc-sputtered Fe films on GaAs [5] or ion-beam sputtered films [6].…”

“…This observation was also confirmed in our VSM measurements. The magnetization curve with the external field in [110] Fe -direction is identical to that in [1][2][3][4][5][6][7][8][9][10] Fe (not shown). The different kinetics of crystal growth or the surface preparation of GaAs substrates in MBE and RF magnetron sputtering may result in the different in-plane magnetic anisotropy.…”

“…They reported the in-plane uniaxial magnetic anisotropy (UMA); a [110] Fedirection was an easy direction and [1][2][3][4][5][6][7][8][9][10] Fe was a hard direction [9,10]. Its origin is still controversial.…”

“…Another approach, i.e., sputtering is also important, as it is conventionally used for wide variety of magnetic film deposition. However, we can find a small number of previous works on the crystallographic [5,6] and the magnetic [7] properties of Fe/GaAs structures fabricated by sputtering. In this report we present our study on the magnetic properties of Fe(001) thin films deposited on GaAs(001) substrates by RF magnetron sputtering.…”

Magnetic properties of Fe films and Fe∕Si∕Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy

“…3 Pioneering work on the epitaxial growth of Fe on GaAs͑001͒ was performed by Krebs et al 4 in 1987 by extending the MBE technique from semiconductors to metals. The epitaxial growth of this system is not restricted to MBE but can also be achieved by techniques employing sputtering, [5][6][7][8][9][10][11] which is the commonly used thin film deposition method in industry. The main interest of the studies mentioned above was on growth quality and magnetic properties with respect to substrate temperature and sputter geometry, but there are more parameters one can vary to influence the film growth.…”