Magnetic Properties of Fe(001) Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering

Hirokazu, Ikeya; Takahashi, Yutaka; Inaba, Nobuyuki; Kirino, Fumiyoshi; Ohtake, Mitsuru; Futamoto, Masaaki

doi:10.1088/1742-6596/266/1/012116

Cited by 9 publications

(2 citation statements)

References 11 publications

(26 reference statements)

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“…But we are interested in Fe thin film growth by sputtering technique which is conventionally used for magnetic metal depositions. We previously reported the epitaxial growth of bcc Fe(001) thin films on GaAs(001) by RF magnetron sputtering 11) . The Fe 100x Co x (Co atomic concentrations of 2, 4, 6, and 11 at.…”

Section: Growth and Structuresmentioning

confidence: 99%

Ferromagnetic Resonance Study of Fe100-xCox/GaAs(001) (x ^|^lt; 11) Deposited by RF Magnetron Sputtering

et al. 2013

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The Fe 100x Co x alloy thin films with dilute Co concentrations (x < 11) were prepared on GaAs(001) substrates by RF magnetron sputtering, and their dynamic magnetic properties were investigated by ferromagnetic resonance spectroscopy operating at Q-band (35 GHz). The magnetization curves measured by VSM show clear dependence on the in-plane field directions, indicating bcc Fe 100x Co x films were epitaxially grown on the substrates. The ferromagnetic resonance linewidths include both intrinsic and extrinsic magnetic damping. The origins of the latter were examined to extract the intrinsic damping. The estimated upper bounds of the Gilbert damping constants, caused by the intrinsic damping, depend on the Co compositions; the damping is accelerated as Co concentration increases in the region with x < 11.

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Section: Growth and Structuresmentioning

confidence: 99%

Ferromagnetic Resonance Study of Fe100-xCox/GaAs(001) (x ^|^lt; 11) Deposited by RF Magnetron Sputtering

et al. 2013

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“…One of the major challenges in developing spintronic devices concerns a reliable injection and detection of spin polarized currents. An efficient method is the use of a ferromagnetic material, which can be directly grown on a semiconducting substrate . It has recently been reported the achievement of spin injection on n‐type Ge using epitaxial Mn 5 Ge 3 thin films or nanowires .…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of strained Mn₅Ge₃nanoislands on Ge(001)

Olive-Méndez

Michez

Spiesser

et al. 2015

Phys. Status Solidi B

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We report on the epitaxial growth of Mn5Ge3 on Ge(001) by molecular beam epitaxy using solid phase epitaxy method. Mn5Ge3 grows as nanoislands, which are randomly distributed over the substrate surface. Select area electron diffraction analysis was used to determine the epitaxial relationship Mn5Ge3(001)[110]//Ge(001)[110], as well as to detect an induced tensile strain along [110] Mn5Ge3 direction to fit the Ge lattice, while the observation of Moiré patterns indicates a complete relaxation along the [11¯0] direction. In‐plane and out‐of‐plane M(H) loops were obtained at 200 K using a vibrating sample magnetometer, it was found that the easy axis of magnetization is perpendicular to the substrate surface and that the crystal magnetic anisotropy is K1 = 9.27 × 105 erg cm−3. The enhancement of the Curie temperature of the nanoislands ∼340 K, which is higher than 296 K of the bulk Mn5Ge3, is attributed to the induced strains.

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Ag-induced large perpendicular magnetic anisotropy in Mn/Ag/Fe(001)

Kim¹,

Yang²,

Hong³

2011

Journal of Applied Physics

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Using the full-potential, linearized, augmented plane wave method, we have investigated the magnetic properties of body-centered-cubic Mn(2 monolayers [ML])/Fe(001), Mn(2 ML)/Ag(1 ML)/Fe(001), and Mn(2 ML)/Ag(2 ML)/Fe(001). We find that the Mn overlayers have a layered antiferromagnetic ground state. However, the Ag spacer layer induces an oscillatory magnetic behavior in Mn film, because the relative direction of magnetization in Mn film is changed with increasing Ag layer thickness. In addition, we have realized that the optimized structure is a crucial factor to determine magnetic ground state of an ultrathin Mn/Fe(001) system. It is achieved that both Mn/Fe and Mn/Ag/Fe(001) systems manifest perpendicular magnetocrystalline anisotropy (MCA). Interestingly, the Ag spacer layer greatly enhances perpendicular magnetic anisotropy energy. The MCA energy in Mn(2 ML)/Fe(001) is about 137 μeV/cell, and it becomes 920 μeV in Mn(2 ML)/Ag(2 ML)/Fe(001). Therefore, we report that the large perpendicular magnetic anisotropy system can be materialized in the Mn/Ag/Fe(001) structure. In addition, we also present the calculated x ray absorption spectroscopy and x ray magnetic circular dichroism of Fe and Mn layers.

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Magnetic Properties of Fe(001) Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering

Cited by 9 publications

References 11 publications

Ferromagnetic Resonance Study of Fe100-xCox/GaAs(001) (x ^|^lt; 11) Deposited by RF Magnetron Sputtering

Ferromagnetic Resonance Study of Fe100-xCox/GaAs(001) (x ^|^lt; 11) Deposited by RF Magnetron Sputtering

Epitaxial growth of strained Mn₅Ge₃nanoislands on Ge(001)

Ag-induced large perpendicular magnetic anisotropy in Mn/Ag/Fe(001)

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Magnetic Properties of Fe(001) Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering

Cited by 9 publications

References 11 publications

Ferromagnetic Resonance Study of Fe100-xCox/GaAs(001) (x ^|^lt; 11) Deposited by RF Magnetron Sputtering

Ferromagnetic Resonance Study of Fe100-xCox/GaAs(001) (x ^|^lt; 11) Deposited by RF Magnetron Sputtering

Epitaxial growth of strained Mn5Ge3nanoislands on Ge(001)

Ag-induced large perpendicular magnetic anisotropy in Mn/Ag/Fe(001)

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Epitaxial growth of strained Mn₅Ge₃nanoislands on Ge(001)