Structure and transport mechanisms of Si/porous Si n–p junctions prepared by liquid phase epitaxy

Farag, A.A.M.

doi:10.1016/j.apsusc.2008.09.083

Cited by 31 publications

(10 citation statements)

References 29 publications

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“…The ideality factor of Al/PS/c-Si/Al surface type Schottky diode is calculated from the current-voltage characteristics by using the following Eq. [15]:…”

Section: Resultsmentioning

confidence: 99%

Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE)

Hadi

2017

ILCPA

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Abstract. In this work, porous silicon layers PS were fabricated on p-type crystalline silicon wafers using electrochemical etching ECE process. Al films were deposited onto porous layer /Si wafers by thermal evaporation to form rectifying junction. An investigation of the dependence on applied etching time to formed PS layer was studied. Effect etching time on the electrical properties of porous silicon is checked using Current-voltage I-V characteristics. The ideality factor and dynamic resistances are found to be large than the one and 20 (kΩ) respectively by the analysis of the dark I-V characteristics of Al/PS/p-Si heterojunction.

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“…The ideality factor of Al/PS/c-Si/Al surface type Schottky diode is calculated from the current-voltage characteristics by using the following Eq. [15]:…”

Section: Resultsmentioning

confidence: 99%

Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE)

Hadi

2017

ILCPA

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“…After irradiation with 60 mJ/cm 2 , the junction characteristics start to degrade and V bi is decreased. The values of V bi for the photodetector prepared at 20 mA/cm 2 and irradiated by a laser fluence smaller than 60 mJ/cm 2 are comparable to those for a high-performance Si heterojunction photodetector [20,21]. Figure 10 reveals the spectral responsivity of photodetectors under the effect of laser irradiation using various laser fluences.…”

Section: Ismail and Aboodmentioning

confidence: 88%

Effect of Nd:YAG laser irradiation on the characteristics of porous silicon photodetector

Ismail

Abood

2013

Int Nano Lett

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Electrical and photoresponse properties of a Al/porous silicon/crystalline silicon/Al structure (Al/PSi/Si/Al) are investigated under irradiation of Nd:YAG laser pulses. The effect of Nd-YAG laser irradiation on the morphological and structural properties of a porous silicon layer is also demonstrated. The porous Si layer is synthesized on a single crystalline p-type Si using electrochemical etching in aqueous hydrofluoric acid at a current density of 20 mA/cm 2 for a 40-min etching time. The structure of the porous layer is investigated using atomic force microscopy and optical microscopy. The electrical properties and photodetector figures of merit (responsivity, detectivity, and carrier lifetime) are found to be dependent on the laser fluence.

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“…Various methods have been suggested to determine the series, R s and shunt, R sh resistances which affect the device performance [21][22][23][24][25]. The simplest method [21][22][23] for the determination of the R s and R sh were extracted from the plot of the diode junction resistance, R J , against the biasing voltage (not shown here) at sufficiently higher forward and reverse biases, respectively, where…”

Section: Dark Current Density-voltage Properties Of N-algaas/p-gaas Dmentioning

confidence: 99%

“…The simplest method [21][22][23] for the determination of the R s and R sh were extracted from the plot of the diode junction resistance, R J , against the biasing voltage (not shown here) at sufficiently higher forward and reverse biases, respectively, where…”

Section: Dark Current Density-voltage Properties Of N-algaas/p-gaas Dmentioning

confidence: 99%

Structure and transport mechanisms of Si/porous Si n–p junctions prepared by liquid phase epitaxy

Cited by 31 publications

References 29 publications

Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE)

Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE)

Effect of Nd:YAG laser irradiation on the characteristics of porous silicon photodetector

Influence of temperature and illumination on the characteristics of nanocrystalline Ga0.29 Al0.71As based heterojunction prepared by MOCVD

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