Structure and surface effect of field emission from gallium nitride nanowires

Wang, Y.Q.; Wang, R.Z.; Zhu, Mankang; Wang, B.B.; Wang, B.; Yan, Hui

doi:10.1016/j.apsusc.2013.07.163

Cited by 14 publications

(7 citation statements)

References 22 publications

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“…Just as Fig. 3(a) shows, the nanowires synthesized in the condition of 30 min have a larger surface area and length-diameter ratio, which can advance the field emission maximum current density 37 38 .…”

Section: Resultsmentioning

confidence: 88%

A low cost, green method to synthesize GaN nanowires

Zhao

Zhang

et al. 2015

Sci Rep

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The synthesis of gallium nitride nanowires (GaN NWs) by plasma enhanced chemical vapor deposition (PECVD) are successfully demonstrated in this work. The simple and green synthesis route is to introduce gallium oxide (Ga2O3) and nitrogen (N2) for the growth of nanowires. The prepared GaN nanowires have a single crystalline wurtzite structure, which the length of some nanowires is up to 20 μm, with a maximum diameter about 140 nm. The morphology and quantity of the nanowires can be modulated by the growth substrate and process parameters. In addition, the photoluminescence and field emission properties of the prepared GaN nanowires have been investigated, which were found to be largely affected by their structures. This work renders an environmentally benign strategy and a facile approach for controllable structures on nanodevice.

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Section: Resultsmentioning

confidence: 88%

A low cost, green method to synthesize GaN nanowires

Zhao

Zhang

et al. 2015

Sci Rep

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“…Adapted from [34]. (b) Overview of the on and threshold electric fields (E on and E thr , respectively) and maximum current density, J max , for various materials used for field emission to date, in order of dimensionality (1D, 2D and bulk) and increasing work function (Φ), including 1D nanowires -AlQ 3 [35,36], Si [37][38][39], MgO [40,41], AlN [42][43][44][45], CdS [46][47][48][49], W [50][51][52], ITO [53], CuPC [54,55], InGaN [56][57][58], CNTs [59][60][61][62][63] Cu [64][65][66], ZnO [67][68][69][70][71][72], GaN [73,74], ZnMgO [70,75], WO [76][77][78][79] ), MoO 2 [80]…”

Section: Field Emission Application Of Cntsmentioning

confidence: 99%

X-ray generation using carbon nanotubes

et al. 2015

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Since the discovery of X-rays over a century ago the techniques applied to the engineering of X-ray sources have remained relatively unchanged. From the inception of thermionic electron sources, which, due to simplicity of fabrication, remain central to almost all X-ray applications, there have been few fundamental technological advances. However, with the emergence of ever more demanding medical and inspection techniques, including computed tomography and tomosynthesis, security inspection, high throughput manufacturing and radiotherapy, has resulted in a considerable level of interest in the development of new fabrication methods. The use of conventional thermionic sources is limited by their slow temporal response and large physical size. In response, field electron emission has emerged as a promising alternative means of deriving a highly controllable electron beam of a well-defined distribution. When coupled to the burgeoning field of nanomaterials, and in particular, carbon nanotubes, such systems present a unique technological opportunity. This review provides a summary of the current state-of-the-art in carbon nanotube-based field emission X-ray sources. We detail the various fabrication techniques and functional advantages associated with their use, including the ability to produce ever smaller electron beam assembles, shaped cathodes, enhanced temporal stability and emergent fast-switching pulsed sources. We conclude with an overview of some of the commercial progress made towards the realisation of an innovative and disruptive technology.

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“…GaN powder and N plasma at about 2000°C were used as precursors to produce GaN NWs by plasma assisted hot filament CVD (PAHFCVD), by using Au as catalyst to help the GaN NWs growth [1,19]. It is often reported that concentrations of N vacancies and impurities increase due to high temperature synthesis of GaN nanostructures.…”

Section: Introductionmentioning

confidence: 99%