A low cost, green method to synthesize GaN nanowires

Zhao, Junwei; Zhang, Yuefei; Li, Y.; Chao-hua, SU; Song, Xuemei; Yan, Huihui; Wang, Ru-Zhi

doi:10.1038/srep17692

Cited by 38 publications

(22 citation statements)

References 39 publications

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“…Referring to the Raman spectrum of the pure GaN film in the literature, the first-order phonons of E 2 (high) and A 1 (LO) modes of GaN should be around 568 cm −1 and 727 cm −1 , respectively. 8,33 A large shift up to 10 cm −1 for E 2 (high) and 6 cm −1 for A 1 (LO) modes were obtained with the laser power density up to 100 kW/cm 2 . These shifts are possibly due to the lattice stress caused by the heating effect through the laser irradiation.…”

Section: Synthesis and Basic Characterization Of Gan Thin Filmsmentioning

confidence: 86%

“…Higher electron mobility and electron saturation velocity allow for higher frequency of operation, and fast responsivity. 3,4 To date, the synthesis of different types of GaN materials have been performed by using various technical routes, including pulsed laser deposition techniques, 5 electrochemical techniques, 6 hot filament chemical vapor deposition (HFCVD), 7 plasma enhanced CVD, 8 sputtering method, 9 spin coating method, 10 and molecular beam epitaxy (MBE), [11][12][13][14] among others.…”

Section: Introductionmentioning

confidence: 99%

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Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

et al. 2016

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High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.

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Section: Synthesis and Basic Characterization Of Gan Thin Filmsmentioning

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

et al. 2016

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“…1D structures of GaN have also been studied in recent years such as nanowires [37][38][39][40] and nanotubes [41,42]. Different dopants have been incorporated to optimize the physical proprieties of GaN based DMSs such as Mg [43][44][45], Mn [46], Fe [47], Cu [48], Si [49,50], Cr [51] and Tb [52], etc.…”

Section: Introductionmentioning

confidence: 99%

High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response

et al. 2020

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Group III–V semiconductors with direct band gaps have become crucial for optoelectronic and microelectronic applications. Exploring these materials for spintronic applications is an important direction for many research groups. In this study, pure and cobalt doped GaN nanowires were grown on the Si substrate by the chemical vapor deposition (CVD) method. Sophisticated characterization techniques such as X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive X-Ray Spectroscopy (EDS), Transmission Electron Microscopy (TEM), High-Resolution Transmission Electron Microscopy (HRTEM) and photoluminescence (PL) were used to characterize the structure, morphology, composition and optical properties of the nanowires. The doped nanowires have diameters ranging from 60–200 nm and lengths were found to be in microns. By optimizing the synthesis process, pure, smooth, single crystalline and highly dense nanowires have been grown on the Si substrate which possess better magnetic and optical properties. No any secondary phases were observed even with 8% cobalt doping. The magnetic properties of cobalt doped GaN showed a ferromagnetic response at room temperature. The value of saturation magnetization is found to be increased with increasing doping concentration and magnetic saturation was found to be 792.4 µemu for 8% cobalt doping. It was also depicted that the Co atoms are substituted at Ga sites in the GaN lattice. Furthermore N vacancies are also observed in the Co-doped GaN nanowires which was confirmed by the PL graph exhibiting nitrogen vacancy defects and strain related peaks at 455 nm (blue emission). PL and magnetic properties show their potential applications in spintronics.

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“…The growth of one-dimensional (1D) nanostructures, such as nanowires (NWs), nanorods, and nanotubes, is of considerable interest in terms of its potential applications in novel functional electrical and optical devices, including light-emitting diodes, field-effect transistors, solar cells, and sensors [1]. Therefore, multiple approaches have been introduced to grow 1D nanomaterials using various materials such as Si [2,3], C [4,5], ZnO [6,7], GaN [8,9], TiO 2 [10,11], SiOx [12,13], and so forth. Among these 1D nanomaterials, Si NWs have been the most widely studied because Si is the most common industrial semiconductor and nanomaterials can facilitate the design of novel functional devices beyond the confines of Si films [14,15].…”

Section: Introductionmentioning

confidence: 99%

Snow-Ice-Inspired Approach for Growth of Amorphous Silicon Nanotips

Kim

Park

2019

Nanomaterials

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The growth of one-dimensional nanostructures without a metal catalyst via a simple solution method is of considerable interest due to its practical applications. In this study, the growth of amorphous silicon (a-Si) nanotips was investigated using an aqueous solution dropped onto the Si substrate, followed by drying at room temperature or below for 24 h, resulting in the formation of a-Si nanotips on the Si substrate. Typically, the a-Si nanotips were up to 1.6 μm long, with average top and middle diameters of 30 and 80 nm, respectively, and contained no metal catalyst in their structure. The growth of a-Si nanotips can be explained in terms of the liquid–solid mechanism, where the supercritical Si solution (liquid) generated on the Si substrate (after reaction with the aqueous solution) promotes the nucleation of solid Si (acting as seeds) on the roughened surface, followed by surface diffusion of Si atoms along the side wall of the Si seeds. This is very similar to the phenomenon observed in the growth of snow ice crystals in nature. When photoexcited at 265 nm, the a-Si nanotips showed blue luminescence at around 435 nm (2.85 eV), indicating feasible applicability of the nanotips in optoelectronic functional devices.

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A low cost, green method to synthesize GaN nanowires

Cited by 38 publications

References 39 publications

Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response

Snow-Ice-Inspired Approach for Growth of Amorphous Silicon Nanotips

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