Structure and refractive index of thin alumina films grown by atomic layer deposition

Ultra-thin alumina and silicon nitride MEMS fabricated membranes for the electron multiplication

“…On the other hand, we observed broadening and displacement towards lower energies for O1s peaks attributed to temperatures of 150°C and 100°C, which indicates the presence of hydroxyl and/or carbon related bonds in the material. This observation is in line with other reports on similarly conditioned ALD processes [26,29]. Nevertheless, materials prepared at temperatures in the range 150°C-300°C display a good stoichiometry, with in-bulk oxygen to aluminium elemental ratio of 1.49-1.50.…”

“…We evaluated films deposited on top of silicon and calculated GPC as average thickness divided by total number of cycles, which was set to 500 and 1000. An apex in the profile of GPC observed at 200°C is in accordance with previous studies [25][26][27][28][29], which showed that at higher temperatures, due to the decrease of OH sites (dehydroxilation) on the surface, the growth is slowed down. At lower temperatures, on the other hand, mass transport drops and reactions between precursor gasses and surface become incomplete.…”

Plasmon-enhanced photoluminescence from TiO2 and TeO2 thin films doped by Eu3+ for optoelectronic applications

“…The shift of the resonance wavelength in a multilayer, as well as the change of transmission band intensity can be explained by the change of plasmonic platform surrounding. In comparison with air both TeO 2 :Eu and Al 2 O 3 layers exhibit a much greater permittivity, which affects the optical properties of plasmonic nanostructures and redshifts the resonance wavelength [ 34 – 35 40 – 41 ]. The excitation and emission spectra samples are shown in Figure 10 .…”

“…Additionally, it can be seen, that the position of the minimum of transmission as function of the Al 2 O 3 film thickness. This may be explained by the different permittivity of the layers [34][35][36]. Emission and excitation spectra are shown in Figure 6.…”

Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status

“…This buffer layer helps create a smooth, stable platform onto which the a-IGZO is deposited, and is necessary as most flexible substrates have a high native roughness (polymer substrates typically have a surface roughness of around 50 nm to 500 nm depending on the preparation conditions, much higher than, for example, typical silicon wafer roughnesses of less than 1 nm). This buffer layer also acts as a barrier against the ingress of moisture and gases from the polymer and/or environment 199,[205][206][207][208] . While this buffer layer does not show any direct electrical behaviour, defects at the interface with the semiconductor can play a significant role in determining device characteristics, as described below in the discussions of defects.…”