Structure and purity of epitaxial films of copper and rhodium deposited onto MgO single-crystal substrates by glow discharge sputtering

Delplancke, Marie Paule; Delcambe, P.; Binst, L.; Jardinier‐Offergeld, M.; Bouillon, Florent

doi:10.1016/0040-6090(86)90145-8

Cited by 20 publications

(9 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Such a layer is clearly preferred for electron-transport studies, since twin boundary electron scattering is absent. Reported epitaxial Cu/MgO(001) growth temperatures T s range from room temperature [10,14] to 185°C [15], 50-300°C [16], 300-350°C [17], 370°C [18], and 580°C [13]. However, it is unclear what temperature yields the highest quality Cu layer since most studies determine the crystalline structure only by XRD ω−2θ scans and reflection high energy electron diffraction-techniques which are relatively insensitive to [6,10,13,16].…”

Section: Introductionmentioning

confidence: 99%

“…Similarly, epitaxial growth of Cu(111) on the basal plane of sapphire leads to a twinned structure which is not a "true" single crystal [11][12][13]. In contrast, Cu growth on MgO(001) exhibits a cubeon-cube epitaxial relationship, (001) Cu ||(001) MgO with [100] Cu || [100] MgO , with only one possible crystalline orientation, yielding a Cu single crystal layer without twin boundaries [10,[13][14][15][16][17][18]. Such a layer is clearly preferred for electron-transport studies, since twin boundary electron scattering is absent.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Growth of epitaxial Cu on MgO(001) by magnetron sputter deposition

2006

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth of epitaxial Cu on MgO(001) by magnetron sputter deposition

2006

View full text Add to dashboard Cite

“…[8][9][10] A detailed understanding of the processes that determine the microstructural and surface morphological evolution is critical for these applications and the development of a process that controllably alters the surface morphology is desirable. Various researchers have grown epitaxial Cu on Si͑001͒, 9,[11][12][13][14][15][16] Si͑111͒, 7,13,17 and MgO͑001͒, 6,18,19 and have studied the microstructure by x-ray 3,8,9,[13][14][15][16]19 and electron diffractions, 1,6,8,[12][13][14][15][16][17]20,21 and the surface morphology by ex situ atomic force microscopy, which is, however, affected by surface oxidation. 22 Epitaxial Cu͑001͒ layers grown on hydrogen-terminated Si͑001͒ by thermal evaporation at room temperature exhibit atomically rough surfaces with 5-30 nm wide mounds and a root mean square ͑rms͒ roughness of 1-2 nm.…”

Section: Introductionmentioning

confidence: 99%

Surface morphological evolution during annealing of epitaxial Cu(001) layers

Purswani

Gall

2008

Journal of Applied Physics

View full text Add to dashboard Cite

Single crystal Cu͑001͒ layers were grown on MgO͑001͒ by ultrahigh vacuum magnetron sputtering at T s = 100°C. Quantitative surface morphological analyses by in situ scanning tunneling microscopy show that the surfaces exhibit self-affine mound structures with a scaling exponent of 0.82Ϯ 0.03 and a mound radius r c that increases from 31Ϯ 8 to 39Ϯ 6 nm for increasing layer thickness t = 24-120 nm. In situ annealing at 200 and 300°C leads to a thermodynamically driven mass transport that minimizes the surface step density, resulting in broader mounds and a smaller root mean square surface roughness. This effect is most pronounced for t = 24 nm, for which r c increases from 31Ϯ 8 to 70Ϯ 20 nm and decreases from 1.3Ϯ 0.1 to 0.74Ϯ 0.08 nm, resulting in a decrease in the average surface slope from = 7°to 2°and an increase in the average terrace width w T by more than a factor of 4. In contrast, w T increases by only 20% for t = 120 nm. This remarkable difference between "thin" and "thick" layers is attributed to diverging surface morphological pathways during annealing: The strong smoothening for t = 24 nm is due to a competitive coalescence process where some mounds grow laterally at the expense of their smaller neighbors, which die out. In contrast, the initially wider mounds of thicker layers ͑t = 120 nm͒ combine to form a quasistable surface morphology that exhibits anisotropic mound structures, which limit mass transport and stabilize the surface step density.

show abstract

“…11) In addition, it is known that Rh 2 O 3 has three polymorphs, Rh 2 O 3 (I) or α-Rh 2 O 3 with a corundum structure, Rh 2 O 3 (II) with an orthorhombic structure, and Rh 2 O 3 (III) or β-Rh 2 O 3 with an orthorhombic structure. 9) The preparation of Rh thin films has been studied by electron beam evaporation and sputtering 12) and chemical vapor deposition (CVD), 13) however thin films of Rh oxides have scarcely been investigated. We have reported preliminary results on the formation of amorphous Rh oxide thin films by reactive sputtering in a previous paper, however, low-resistivity RhO 2 films could not be realized.…”

Section: Introductionmentioning

confidence: 99%

Preparation of RhO₂ Thin Films by Reactive Sputtering and Their Characterizations

Kato

Abe

Kawamura

et al. 2001

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Thin films of RhO 2 , which belongs to the family of conducting platinum group metal oxides, were prepared by reactive sputtering. Influences of sputtering parameters, such as rf power and substrate temperature, and postdeposition annealing on crystallinity, chemical bonding state and resistivity of the deposited films were studied, in order to obtain low-resistivity RhO 2 thin films. The resistivity of the deposited films decreased with decreasing rf power. Plasma emission measurement suggested that oxidation of Rh proceeded under the low rf power condition. Poorly-crystallized conducting RhO 2 thin films with resistivity of 300-500 µ cm were prepared at substrate temperatures below 150 • C; the resistivity of the films increased with increasing substrate temperature above 150 • C due to the formation of semiconducting Rh 2 O 3 . After postdeposition annealing in oxygen atmosphere at up to 700 • C, well-crystallized RhO 2 films were formed, and the minimum resistivity of 80 µ cm was obtained.

show abstract

Structure and purity of epitaxial films of copper and rhodium deposited onto MgO single-crystal substrates by glow discharge sputtering

Cited by 20 publications

References 9 publications

Growth of epitaxial Cu on MgO(001) by magnetron sputter deposition

Growth of epitaxial Cu on MgO(001) by magnetron sputter deposition

Surface morphological evolution during annealing of epitaxial Cu(001) layers

Preparation of RhO₂ Thin Films by Reactive Sputtering and Their Characterizations

Contact Info

Product

Resources

About

Structure and purity of epitaxial films of copper and rhodium deposited onto MgO single-crystal substrates by glow discharge sputtering

Cited by 20 publications

References 9 publications

Growth of epitaxial Cu on MgO(001) by magnetron sputter deposition

Growth of epitaxial Cu on MgO(001) by magnetron sputter deposition

Surface morphological evolution during annealing of epitaxial Cu(001) layers

Preparation of RhO2 Thin Films by Reactive Sputtering and Their Characterizations

Contact Info

Product

Resources

About

Preparation of RhO₂ Thin Films by Reactive Sputtering and Their Characterizations