Structure and properties of transparent conductive doped ZnO films by pulsed laser deposition

Park, Sang Moo; Ikegami, Tomoaki; Ebihara, Kenji; Shin, Paik Kyun

doi:10.1016/j.apsusc.2006.02.046

Cited by 154 publications

(70 citation statements)

References 15 publications

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“…This is consistent with the observed lower carrier concentrations measured in SP deposited films compared with zinc rich environments of well-studied vacuum techniques such as PLD and magnetron sputtering -where carrier concentrations in the order of 10 21 cm -3 are reported. 47,48 As the Fermi energy rises with increasing free carrier concentration 49 , the formation energy of a dopant occupying a substitutional site increases. In parallel, the formation energy of an Al Zn V Zn acceptor hybrid defect decreases and, in oxygen rich conditions, falls below that of the Al Zn.…”

Section: Resultsmentioning

confidence: 99%

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

et al. 2016

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© 2016 The Royal Society of Chemistry.The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1-3 at%. Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using AC Hall as a measurement technique we probe the electronic properties of our doped films, deconvoluting the impact of doping on the measured charge carrier concentrations and Hall mobility. We focus on the low doping range i.e. 0.1-1 at%, where we observe unexpected variations in charge carrier concentration and mobility and propose a mechanism to explain our observations. In this doping range highly resistive films are formed hence we highlight AC Hall as a reliable and highly reproducible technique for analysing electrical properties and subsequently elucidate the doping mechanisms. The implementation of a simple, post-deposition heat treatment demonstrated on our AZO results in typical films with charge carrier concentrations exceeding >1019 cm-3, and electron mobilities >10 cm2 V-1 s-1 and stability exceeding 180 days. We describe in detail the nature of the defect chemistry and the role of intrinsic defects and show, that despite significant variations in dopant species and grain boundary concentrations, that the defect chemistry dominates the electrical characteristics

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Section: Resultsmentioning

confidence: 99%

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

et al. 2016

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“…While synthesizing TCO thin films, it is a common practice to introduce impurities such as In, Al, Ga, N, P, As and F [5], within ZnO thin films in order to enhance the optoelectronic properties. ZnO : Ga (GZO) thin films have been deposited by several techniques such as molecular beam epitaxy [6], pulsed laser deposition [7], sintering [8], chemical spray [9,10], rf magnetron sputtering [11], ion plating [12] and solid state reaction [13]. Photoluminescence (PL) and 3 Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Gallium doping in transparent conductive ZnO thin films prepared by chemical spray pyrolysis

Babar

Deshamukh

Deokate

et al. 2008

J. Phys. D: Appl. Phys.

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Zinc oxide (ZnO) and ZnO : Ga films have been deposited by the spray pyrolysis method onto preheated glass substrates using zinc acetate and gallium nitrate as precursors for Zn and Ga ions, respectively. The effect of Ga doping on the structural, morphological, optical and electrical properties of sprayed ZnO thin films were investigated using x-ray diffraction (XRD), scanning electron microscopy , optical absorption, photoluminescence (PL) and Hall effect techniques. XRD studies reveal that films are polycrystalline with hexagonal (wurtzite) crystal structure. The thin films were oriented along the (0 0 2) plane. Room temperature PL measurements indicate that the deposited films exhibit proper doping of Ga in ZnO lattice. The average transparency in the visible range was around ∼85-95% for typical thin film deposited using 2 at% gallium doping. The optical band gap increased from 3.31 to 3.34 eV with Ga doping of 2 at%. The addition of gallium induces a decrease in electrical resistivity of the ZnO : Ga films up to 2 at% gallium doping. The highest figure of merit observed in this present study was 3.09 × 10 −3 cm 2 −1 .

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“…Therefore, resistivity decreases with oxygen partial pressure from 20 to 80 m Torr, reaches a minimum at 80 m Torr, and then increases at oxygen partial pressure above 80 m Torr. Since, electrons in the SnO 2 : Ga 2 O 3 films are supplied from oxygen vacancies and gallium atoms in the films, it can be thought that an increase of oxygen content might cause a decrease of the oxygen vacancies, results in increase of resistivity 10) . Fig.…”

Section: Resultsmentioning

confidence: 99%

Electrical and Optical Properties of Ga-doped SnO₂Thin Films Via Pulsed Laser Deposition

Sung¹,

Kim²,

Seo³

et al. 2011

Journal of the Korean institute of surface engineering

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Ga 2 O 3 -doped SnO 2 thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to 600 o C). The best opto-electrical properties is shown by the film deposited at substrate temperature of 300 o C with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is 9.57 × 10 −3 Ω cm with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.

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Structure and properties of transparent conductive doped ZnO films by pulsed laser deposition

Cited by 154 publications

References 15 publications

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

Gallium doping in transparent conductive ZnO thin films prepared by chemical spray pyrolysis

Electrical and Optical Properties of Ga-doped SnO₂Thin Films Via Pulsed Laser Deposition

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Structure and properties of transparent conductive doped ZnO films by pulsed laser deposition

Cited by 154 publications

References 15 publications

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

Gallium doping in transparent conductive ZnO thin films prepared by chemical spray pyrolysis

Electrical and Optical Properties of Ga-doped SnO2Thin Films Via Pulsed Laser Deposition

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Electrical and Optical Properties of Ga-doped SnO₂Thin Films Via Pulsed Laser Deposition