Structure and properties of CeN thin films deposited in arc discharge

Xiao, S. Q.; Tsuzuki, Kaoru; Lungu, C.P.; Takai, O.

doi:10.1016/s0042-207x(98)00276-0

Cited by 7 publications

(11 citation statements)

References 9 publications

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“…Sclar 3,4 predicted that CeN is a semiconductor with an estimated band gap E g , based on an empirical relationship between E g and ionic and covalent radii developed for III-V semiconductors, of 1.8 eV. This is in agreement with optical absorption experiments carried out by Xiao et al [5][6][7] on polycrystalline CeN layers deposited on borosilicate glass substrates by rf ion plating. Xiao et al obtained E g ϭ1.76 eV.…”

Section: Introductionsupporting

confidence: 73%

“…30,31 Previously reported values for polycrystalline cubic CeN range from 460 to Ͼ2ϫ10 8 ⍀ cm. [5][6][7] The large differences between the resistivity of the present epitaxial CeN͑001͒ layers and previous polycrystalline CeN samples are primarily due to increased scattering of conduction electrons from grain boundaries and microcracks in the latter cases. Moreover, it is likely that the polycrystalline samples in previous experimental reports were heavily oxidized due to the extreme hygroscopic nature of CeN.…”

Section: B Growth and Physical Properties Of Epitaxial Cen"001…mentioning

confidence: 81%

“…The resistivity of CeN͑001͒ is 29 ⍀ cm between 2 and 50 K, where defect scattering dominates, and increases linearly with temperature in the phonon scattering regime to a rooma͒ Electronic mail: jegreene@uiuc.edu temperature value of 68.5 ⍀ cm, one to four orders of magnitude lower than values reported in previous investigations. [5][6][7] The positive temperature coefficient of resistance combined with electron carrier concentrations of 2.8Ϯ0.2ϫ10 22 cm Ϫ3 indicate that CeN is metallic. Nanoindentation measurements show that the elastic modulus of CeN͑001͒ is comparable to, while the hardness is about 30% lower than, that of ScN, 10 the TM nitride which most closely matches it in chemical bonding.…”

Section: Introductionmentioning

confidence: 99%

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Growth and physical properties of epitaxial CeN layers on MgO(001)

Lee

Gall

Shin

et al. 2003

Journal of Applied Physics

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While NaCl-structure transition-metal nitrides have been widely studied over the past two decades, little is known about the corresponding NaCl-structure rare-earth nitrides. Polycrystalline CeN, for example, has been reported by different groups to be both a wide band-gap semiconductor and a metal. To address this controversy, we have grown epitaxial CeN layers on MgO(001) and measured their physical properties. The films were grown at 700 °C by ultrahigh vacuum reactive magnetron sputter deposition in mixed Ar/N2 discharges maintained at 4 mTorr (0.53 Pa). X-ray diffraction and transmission electron microscopy results establish the film/substrate epitaxial relationship as cube-on-cube, (001)CeN‖(001)MgO with [100]CeN‖[100]MgO, while Rutherford backscattering spectroscopy shows that the layers are stoichiometric with N/Ce=0.99±0.02. CeN is metallic with a positive temperature coefficient of resistivity and a temperature-independent carrier concentration, as determined by Hall effect measurements, of 2.8±0.2×1022 cm−3 with a room temperature mobility of 0.31 cm2 V−1 s−1. At temperatures between 2 and 50 K, the resistivity is limited by defect scattering and remains constant at 29 μΩ cm, while at higher temperatures it increases linearly, limited primarily by phonon scattering, to reach a room-temperature value of 68.5 μΩ cm. The hardness and elastic modulus of CeN(001) were determined from nanoindentation measurements to be 15.0±0.9 and 330±16 GPa.

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Section: Introductionsupporting

confidence: 73%

Section: B Growth and Physical Properties Of Epitaxial Cen"001…mentioning

confidence: 81%

Section: Introductionmentioning

confidence: 99%

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Growth and physical properties of epitaxial CeN layers on MgO(001)

Lee

Gall

Shin

et al. 2003

Journal of Applied Physics

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“…Analysis of the CeN diffraction pattern using Lorentzian fits of the first four characteristic CeN peaks indicate a lattice constant of 5.04Å ± 0.01Å using Bragg's law, which is in agreement with the published value of 5.02Å [111]. Further analysis of the diffraction pattern using Scherrer's equation indicates that the average resultant crystallite size is 9.4 nm.…”

Section: Results Of the Synthesis Of Cen Via Reactive Millingsupporting

confidence: 84%

Synthesis and Optimization of the Sintering Kinetics of Actinide Nitrides

Butt¹,

Jaques²

2009

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“…q 300 K values for polycrystalline films are typically $2 to 10 6 times higher; q 300 K for polycrystalline TiN ranges from 20 to 200 lX-cm, 27,28 polycrystalline ZrN from 23 to 2000 lX-cm, [29][30][31] polycrystalline HfN from 225 to 800 lX-cm, 32 and polycrystalline CeN from 460 to >2 Â 10 8 lX-cm. [33][34][35] The low resistivity values of our epitaxial films are an additional indicator of high structural quality.…”

Section: Resultsmentioning

confidence: 98%

Electron/phonon coupling in group-IV transition-metal and rare-earth nitrides

Mei

Rockett

Hultman

et al. 2013

Journal of Applied Physics

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Transport electron/phonon coupling parameters and Eliashberg spectral functions a tr 2 F( hx) are determined for group-IV transition-metal (TM) nitrides TiN, ZrN, and HfN, and the rare-earth (RE) nitride CeN using an inversion procedure based upon temperature-dependent (4 < T < 300 K) resistivity measurements of high-crystalline-quality stoichiometric epitaxial films grown on MgO(001) by magnetically-unbalanced reactive magnetron sputtering. Transport electron/phonon coupling parameters k tr vary from 1.11 for ZrN to 0.82 for HfN, 0.73 for TiN, and 0.44 for CeN. The small variation in k tr among the TM nitrides and the weak coupling in CeN are consistent with measured superconducting transition temperatures 10.4 (ZrN), 9.18 (HfN), 5.35 (TiN), and <4 K for CeN. The Eliashberg spectral function describes the strength and energy spectrum of electron/phonon coupling in conventional superconductors. Spectral peaks in a 2 F( hx), corresponding to regions in energy-space for which electrons couple to acoustic hx ac and optical hx op phonon modes, are centered at hx ac ¼ 33 and hx op ¼ 57 meV for TiN, 25 and 60 meV for ZrN, 18 and 64 meV for HfN, and 21 and 39 meV for CeN. The acoustic modes soften with increasing cation mass; optical mode energies remain approximately constant for the TM nitrides, but are significantly lower for the RE nitride due to a lower interatomic force constant. Optical/acoustic peak-intensity ratios are 1.15 6 0.1 for all four nitrides, indicating similar electron/phonon coupling strengths a tr ( hx) for both modes. V C 2013 AIP Publishing LLC. [http://dx

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Structure and properties of CeN thin films deposited in arc discharge

Cited by 7 publications

References 9 publications

Growth and physical properties of epitaxial CeN layers on MgO(001)

Growth and physical properties of epitaxial CeN layers on MgO(001)

Synthesis and Optimization of the Sintering Kinetics of Actinide Nitrides

Electron/phonon coupling in group-IV transition-metal and rare-earth nitrides

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