Structure and Oxide Ion Conductivity Mechanism in Bi2Al4O9 by Combined X-Ray and High-Resolution Neutron Powder Diffraction and 27Al Solid State NMR

Abrahams, Isaac; Bush, Alexandra; Hawkes, G.E.; Nunes, Teresa

doi:10.1006/jssc.1999.8427

Cited by 49 publications

(45 citation statements)

References 12 publications

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“…1c and d) , and c, respectively) due to the electronic space occupancy of the LEPs, the oxygen conductivity mechanism as proposed by Abrahams et al 8 and allegedly found by Zha et al…”

Section: Dft Calculationsmentioning

confidence: 83%

Strontium doping in mullite-type bismuth aluminate: a vacancy investigation using neutrons, photons and electrons

et al. 2012

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We report on strontium doped dibismuth-nonaoxoaluminate(III) produced at 1023 K. Partial substitution of bismuth by strontium in the structure yields oxygen vacancies for charge balance. Introducing oxygen vacancies rearranged the associated Al 2 O 7 double-tetrahedra forming ''Al 3 O 10 '' tri-clusters which were identified by multi-quantum 27 Al MAS NMR. Both STEM-EDX and XPSshowed homogeneous distribution of strontium in the bulk and on the surface, respectively. Moreover, XPS confirms the valence state of bismuth after doping. The orientations of bismuth 6s 2 lone electron pairs were calculated using DFT methods. The amount of strontium in the crystal structure was further confirmed from the decomposition product SrAl 12 O 19 formed during the temperature-dependent X-ray powder diffraction. The structural proof was carried out by refining the structure of (Bi 0.94 Sr 0.06 ) 2 Al 4 O 8.94 from powder neutron and X-ray diffraction data. Rietveld refinements clearly showed the under occupation of one oxygen site and the shift of two aluminum atoms from the doubletetrahedra to two tri-cluster sites.

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“…1c and d) , and c, respectively) due to the electronic space occupancy of the LEPs, the oxygen conductivity mechanism as proposed by Abrahams et al 8 and allegedly found by Zha et al…”

Section: Dft Calculationsmentioning

confidence: 83%

Strontium doping in mullite-type bismuth aluminate: a vacancy investigation using neutrons, photons and electrons

et al. 2012

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“…Due to this feature and its stability in hydrogen atmosphere at elevated temperatures these materials have potential for the use as electrolytes in solid oxide fuel cells (SOFCs). Moreover mullite-type Bi 2 M 4 O 9 ceramics may be used as oxygen sensors and as gas separation membranes [2,3].…”

Section: Introductionmentioning

confidence: 99%

Infrared and Raman spectroscopy of mullite‐type Bi₂Ga₄O₉

Beran

Libowitzky²,

Burianek

et al. 2008

Cryst. Res. Technol.

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Mullite-type Bi 2 Ga 4 O 9 single-crystals were grown by the top-seeded solution growth (TSSG) method and investigated by vibrational spectroscopy. Polarised IR specular reflectance and attenuated total reflectance (ATR) spectra, as well as polarised micro-Raman spectra were acquired at room temperature. Powder IR spectra of sol-gel-derived samples were also recorded. Using model calculations and comparison to other mullite-type compounds, bands at ~ 850 -400 cm -1 could be assigned to stretching and bending vibrations of the structural GaO 4 and GaO 6 units. Low-energetic modes were attributed to motions involving Bi atoms. The IR spectra of Bi 2 Ga 4 O 9 display close similarities to those of the mullite-type alkali gallates (9Ga 2 O 3 · Rb 2 O), while their differences to those of mullite sensu stricto (3Al 2 O 3 · 2SiO 2 and 2Al 2 O 3 · SiO 2 , repectively) are assigned to Si-O stretching vibrations of the corresponding tetrahedral units. Dedicated to Prof. Ladislav Bohatý on the occasion of his 60th birthday

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“…A more detailed mechanism has been proposed for oxide ion conductance in this compound, invoking the polarizability of the Bi 6 s 2 lone pairs of electrons. 14 Although the magnetic properties of the ferrate have been more extensively investigated, [15][16][17][18][19][20][21][22][23] suggesting the occurrence of a paramagnetic-to-antiferomagnetic transition at a Neel temperature of −9 • C the electronic properties of this and the other isostructural compounds have not been investigated systematically. The present study aims to remedy this deficiency by investigating the electronic behaviour of a series of wellcharacterized sintered polycrystalline samples as a function of temperature and frequency.…”

Section: Introductionmentioning

confidence: 99%

The electronic properties of complex oxides of bismuth with the mullite structure

MacKenzie

Dougherty

Barrel

2008

Journal of the European Ceramic Society

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Structure and Oxide Ion Conductivity Mechanism in Bi2Al4O9 by Combined X-Ray and High-Resolution Neutron Powder Diffraction and 27Al Solid State NMR

Cited by 49 publications

References 12 publications

Strontium doping in mullite-type bismuth aluminate: a vacancy investigation using neutrons, photons and electrons

Strontium doping in mullite-type bismuth aluminate: a vacancy investigation using neutrons, photons and electrons

Infrared and Raman spectroscopy of mullite‐type Bi₂Ga₄O₉

The electronic properties of complex oxides of bismuth with the mullite structure

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Structure and Oxide Ion Conductivity Mechanism in Bi2Al4O9 by Combined X-Ray and High-Resolution Neutron Powder Diffraction and 27Al Solid State NMR

Cited by 49 publications

References 12 publications

Strontium doping in mullite-type bismuth aluminate: a vacancy investigation using neutrons, photons and electrons

Strontium doping in mullite-type bismuth aluminate: a vacancy investigation using neutrons, photons and electrons

Infrared and Raman spectroscopy of mullite‐type Bi2Ga4O9

The electronic properties of complex oxides of bismuth with the mullite structure

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Infrared and Raman spectroscopy of mullite‐type Bi₂Ga₄O₉