Structure and magnetism of dysprosium/zirconium multilayers

Luche, M.C.; Baudry, A.; Boyer, P.; Fermon, C.; Miramond, Corinne

doi:10.1016/0304-8853(95)00272-3

Cited by 10 publications

(16 citation statements)

References 21 publications

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“…Measurements on Dy/Er multilayer stacks might be interpreted to show an increased Dy moment; 344 however, the experimentalists, Dumesnil et al, pointed out the missing correction for the additional Er moments which brings the overall stack saturation well below pure bulk Dy. Strained Dy thin films in Lu/Dy/Lu trilayer stacks 345 and Zr/Dy multilayers 346 were shown to have significantly increased T C % 170 K and a completely suppressed AFM phase, however it was later shown for strained Dy in Ta/Dy/Ta trilayers, 347 which exhibits similar behaviour that the T C increase comes at the expense of magnetic moment. A similar observation was made for Tb in Ta/Tb/Ta trilayers with a direct transition to the FM state at T C ¼ 216 K concomitant with a moment drop.…”

Section: Inter-re Alloys and Laminatesmentioning

confidence: 97%

A review of high magnetic moment thin films for microscale and nanotechnology applications

et al. 2016

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The creation of large magnetic fields is a necessary component in many technologies, ranging from magnetic resonance imaging, electric motors and generators, and magnetic hard disk drives in information storage. This is typically done by inserting a ferromagnetic pole piece with a large magnetisation density M S in a solenoid. In addition to large M S , it is usually required or desired that the ferromagnet is magnetically soft and has a Curie temperature well above the operating temperature of the device. A variety of ferromagnetic materials are currently in use, ranging from FeCo alloys in, for example, hard disk drives, to rare earth metals operating at cryogenic temperatures in superconducting solenoids. These latter can exceed the limit on M S for transition metal alloys given by the Slater-Pauling curve. This article reviews different materials and concepts in use or proposed for technological applications that require a large M S , with an emphasis on nanoscale material systems, such as thin and ultra-thin films. Attention is also paid to other requirements or properties, such as the Curie temperature and magnetic softness. In a final summary, we evaluate the actual applicability of the discussed materials for use as pole tips in electromagnets, in particular, in nanoscale magnetic hard disk drive read-write heads; the technological advancement of the latter has been a very strong driving force in the development of the field of nanomagnetism.

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Section: Inter-re Alloys and Laminatesmentioning

confidence: 97%

A review of high magnetic moment thin films for microscale and nanotechnology applications

et al. 2016

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“…DyN/GaN SL samples were investigated by θ -2θ scan x-ray diffraction (XRD) in the range of 2θ = 20 • -100 • . Several diffraction peaks were observed from the hexagonal GaN and SiC as well as DyN, but no other peak was observed [5,6]. Raman scattering data, measured in the backscattering configuration at room temperature using the 488 nm line of an Ar ion laser, showed characteristic features for the pure GaN such as the E h 2 mode peak at 568 cm −1 and the A 1 LA modes associated with SiC at 505 and 513 cm −1 [7].…”

Section: Crystalline and Optical Propertiesmentioning

confidence: 96%

Magnetic, optical and transport properties of GaN-based ferromagnetic/nonmagnetic semiconductor heterostructures

Kim

Zhou

et al. 2004

J. Phys.: Condens. Matter

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A ferromagnetic/nonmagnetic semiconductor DyN/GaN superlattice sample showed a large coercivity Hc of about 1800 Oe at 7 K, which originates from DyN layers. Ferromagnetic order was also observed at 300 K, which may come from GaDyN alloy layers formed at GaN/DyN interfaces. For this superlattice sample, spin tunnel resistance characteristics were observed at low temperatures. GaCrN/GaN/GaCrN trilayer structures were grown by radio frequency molecular beam epitaxy. Clear hysteresis and clear saturation characteristics were observed in the magnetization versus magnetic field curves at all measuring temperatures. A hysteresis loop was observed in the magnetic field dependence of vertical electrical resistance.

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“…(iii) In RE-Zr SLs where coherent epitaxy does not exist owing to the rather large lattice misfits (∼10%), the contribution of the interfaces to the magnetic anisotropy increases as the thickness of the RE blocks decreases. In Dy-Zr SLs the interface anisotropy equilibrates the in-plane volume anisotropy when the thickness of the Dy blocks goes down below 10 Å [12]. However, such a compensation between the two contributions does not occur in Tm-Zr SLs where the magnetic anisotropy of Tm remains along the c-axis as in the bulk [8].…”

Section: Introductionmentioning

confidence: 98%

“…(i) The magnetic phase diagram is strongly modified, mainly as the result of strains induced by epitaxial growing conditions [1][2][3][4][5][6][7]12]. In particular, the trend towards ferromagnetic ordering has been found to be either enhanced or suppressed according to whether the RE is subjected to either lateral compression (as in RE-Lu and RE-Zr SLs) or dilation (as in RE-Y SLs).…”

Section: Introductionmentioning

confidence: 99%

Structure and magnetic behaviour of holmium-zirconium multilayers

Baudry

Boyer

Brunel³

et al. 2000

J. Phys.: Condens. Matter

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Ho films of thickness varying from 100 Å up to 4000 Å and [Ho(x Å) - Zr(y Å)]n multilayers with 7 x , y 30 were grown by evaporation under ultravacuum conditions on an oxidized Si(100) substrate covered with a Zr buffer layer. The x-ray diffraction patterns recorded for the transferred momentum either along the -axis or in the basal plane of the hexagonal close-packed structure show that holmium suffers a permanent in-plane compression in films thinner than 200 Å and Ho(x Å ) - Zr(30 Å) multilayers with x 30. Low-temperature magnetization measurements indicate that the magnetic behaviour of Ho is strongly modified by epitaxial strains. The data are consistent with an enhancement of in-plane ferromagnetic order inside the Ho blocks in the Ho-Zr multilayers. A periodic dependence of the squareness of the hysteresis loop on the thickness of the Zr layers is observed in Ho(30 Å) - Zr(x Å) multilayers, which gives evidence for the existence of interlayer magnetic coupling. The out-of-plane magnetic anisotropy generated by Ho - Zr interfaces in a series of Ho(x Å) - Zr(30 Å) multilayers is found to be strong enough to compensate the in-plane anisotropy as the thickness of the Ho layers is decreased to about three monolayers. The variation of the anisotropy against the Ho layer thickness is satisfactorily reproduced with a rough crystal-field model using the point-charge approximation.

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Structure and magnetism of dysprosium/zirconium multilayers

Cited by 10 publications

References 21 publications

A review of high magnetic moment thin films for microscale and nanotechnology applications

A review of high magnetic moment thin films for microscale and nanotechnology applications

Magnetic, optical and transport properties of GaN-based ferromagnetic/nonmagnetic semiconductor heterostructures

Structure and magnetic behaviour of holmium-zirconium multilayers

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