A ferromagnetic/nonmagnetic semiconductor DyN/GaN superlattice sample showed a large coercivity
Hc
of about 1800 Oe at 7 K, which originates from DyN layers. Ferromagnetic order was also
observed at 300 K, which may come from GaDyN alloy layers formed at GaN/DyN
interfaces. For this superlattice sample, spin tunnel resistance characteristics were observed
at low temperatures. GaCrN/GaN/GaCrN trilayer structures were grown by radio
frequency molecular beam epitaxy. Clear hysteresis and clear saturation characteristics
were observed in the magnetization versus magnetic field curves at all measuring
temperatures. A hysteresis loop was observed in the magnetic field dependence of vertical
electrical resistance.
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