Structure and magnetic properties of epitaxial spinel ferrite thin films

Suzuki, Yuri; Dover, R. B. van; Gyorgy, E. M.; Phillips, Julia M.; Korenivski, Vladislav; Werder, D. J.; Chen, C. H.; Cava, R. J.; Krajewski, J. J.; Peck, W. F.; B., K.

doi:10.1063/1.116601

Cited by 178 publications

(88 citation statements)

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“…The magnetism in ferrite thin films has been shown to be very sensitive to effects such as strain 20 and stoichiometry, 13 while the structure and chemistry at the interfaces in spinfilter-based tunnel junctions are also known to play a crucial role in the spin-filtering efficiency. Our structural study therefore began with in situ RHEED analyses performed in real time throughout the deposition process.…”

Section: A Structural and Chemical Characterizationsmentioning

confidence: 99%

Epitaxial growth and ferrimagnetic behavior of MnFe2O4(111) ultrathin layers for room-temperature spin filtering

et al. 2011

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We report on the epitaxial growth and physical properties of spinel MnFe 2 O 4 (111) thin films with thicknesses down to 2 nm. The thin films, grown on α-Al 2 O 3 (0001) single crystals or Pt(111) buffer layers by oxygen-assisted molecular beam epitaxy, exhibit high structural order with sharp interfaces and low roughness. The electrical and magnetic properties are carefully investigated and it is shown that MnFe 2 O 4 (111) ultrathin films keep an insulating and ferrimagnetic behavior at room temperature. Special attention is given to the iron/manganese valence state and the cationic ordering. X-ray absorption spectroscopy and magnetic circular dichroism measurements reveal that thin films contain mainly Fe 3+ and Mn 2+ cations, distributed predominantly in a normal spinel structure. This study proves the high potential of MnFe 2 O 4 to be used as a magnetic tunnel barrier for spin filtering applications at room temperature.

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Section: A Structural and Chemical Characterizationsmentioning

confidence: 99%

Epitaxial growth and ferrimagnetic behavior of MnFe2O4(111) ultrathin layers for room-temperature spin filtering

et al. 2011

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“…10,11 In contrast, on (110) surface of the substrates, the two orthogonal in-plane directions, [110] and [001], are crystallographically un-equivalent. Epitaxial thin films prepared on (110)-orientated STO, LAO, and MAO substrates would be expected to show stronger anisotropy in the film plane, 12,13 and may demonstrate some metastable structure and fascinating properties which were not observed in its bulk. It was reported that the BiFeO 3 thin film grown on the (110)-oriented LAO substrate exhibits a monoclinic structure and a unique stripe ferroelectric domain configuration with a large theoretical polarization of 130 µc/cm 2 .…”

Section: Introductionmentioning

confidence: 99%

Structural and magnetic anisotropy in the epitaxial FeV2O4 (110) spinel thin films

et al. 2015

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The epitaxial 200-nm-thick FeV2O4(110) films on (110)-oriented SrTiO3, LaAlO3 and MgAl2O4 substrates were fabricated for the first time by pulsed laser deposition, and the structural, magnetic, and magnetoresistance anisotropy were investigated systematically. All the films are monoclinic, whereas its bulk is cubic. Compared to FeV2O4 single crystals, films on SrTiO3 and MgAl2O4 are strongly compressively strained in [001] direction, while slightly tensily strained along normal [110] and in-plane [11¯0] directions. In contrast, films on LaAlO3 are only slightly distorted from cubic. The magnetic hard axis is in <001> direction, while the easier axis is along normal [110] direction for films on SrTiO3 and MgAl2O4, and in-plane [11¯0] direction for films on LaAlO3. Magnetoresistance anisotropy follows the magnetization. The magnetic anisotropy is dominated by the magnetocrystalline energy, and tuned by the magneto-elastic coupling.

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“…[1][2][3] This interest is motivated by potential applications such as magnetic thin-film read heads, 4 cladding layers for thin film inductors, 5 and microwave acoustic devices. 2 For most applications, two of the most important parameters are the resistivity of the layer and the ac permeability, . While the resistivity is similar to that of the bulk the permeability of the thin ferrite films, on which many authors do not report explicitly, appears to be significantly less.…”

Section: Introductionmentioning

confidence: 99%

Structure and soft magnetic properties of sputter deposited MnZn ferrite films

Gillies¹,

Caehoorn²,

Zon³

et al. 1998

7th Joint MMM-Intermag Conference. Abstracts (Cat. No.98CH36275)

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In this paper we report the soft magnetic properties of thin films of sputtered MnZn ferrite deposited on thermally oxidized Si substrates. A high deposition temperature, 600°C, together with the addition of water vapor to the sputtering gas was found to improve the initial ac permeability, . The highest value obtained was approximately 30. For MnZn-ferrite films with much larger grain sizes, as obtained by deposition on a polycrystalline Zn-ferrite substrate, a of 100 was obtained. The results are discussed in terms of the so-called nonmagnetic grain boundary model.

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Structure and magnetic properties of epitaxial spinel ferrite thin films

Cited by 178 publications

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Epitaxial growth and ferrimagnetic behavior of MnFe2O4(111) ultrathin layers for room-temperature spin filtering

Epitaxial growth and ferrimagnetic behavior of MnFe2O4(111) ultrathin layers for room-temperature spin filtering

Structural and magnetic anisotropy in the epitaxial FeV2O4 (110) spinel thin films

Structure and soft magnetic properties of sputter deposited MnZn ferrite films

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