Structure and hydrogen content of stable hot-wire-deposited amorphous silicon

Brockhoff, A. M.; Ullersma, E. H. C.; Meiling, H.; Habraken, F.H.P.M.; Weg, W. F. van der

doi:10.1063/1.122732

Cited by 21 publications

(4 citation statements)

References 12 publications

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“…Also, the hydrogen concentration in this material was shown to be low, at 2 at. %, 15 which indicates that the mobility gap will be smaller than that of conventional a-Si:H. With this in mind, we put forward the following explanation for the occurrence of the inverse MNR in some of our intrinsic het-Si devices. The explanation is based on the band alignment of the constituent phases of nanocrystalline domains embedded in an amorphous matrix, and is derived from the model given by Lucovsky and Overhof that described and explained the inverse MNR in heavily doped microcrystalline silicon.…”

Section: H Meiling A) and R E I Schropp B)mentioning

confidence: 82%

“…13 Cross-sectional transmission electron microscopy ͑TEM͒ images show that this heterogeneous material consists of crystallites which are embedded in an amorphous phase. 14,15 These heterogeneous structures offer significant advantages over conventional plasmaenhanced CVD-based ͑PECVD͒ a-Si:H TFTs. First, the HWCVD het-Si TFTs do not show any shift of the threshold voltage upon prolonged gate voltage stress, in contrast to the conventional a-Si:H TFTs.…”

Section: H Meiling A) and R E I Schropp B)mentioning

confidence: 99%

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The inverse Meyer–Neldel rule in thin-film transistors with intrinsic heterogeneous silicon

Meiling¹,

Schropp²

1999

Applied Physics Letters

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Section: H Meiling A) and R E I Schropp B)mentioning

confidence: 82%

Section: H Meiling A) and R E I Schropp B)mentioning

confidence: 99%

The inverse Meyer–Neldel rule in thin-film transistors with intrinsic heterogeneous silicon

Meiling¹,

Schropp²

1999

Applied Physics Letters

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“…The threshold voltage does not shift upon prolonged application of a gate-voltage. It has been suggested that not only the H content but rather the H bonding structure is responsible for the difference in metastable character for PECVD and HWCVD layers [94,96,97,625].…”

Section: Xib2 Stabilitymentioning

confidence: 99%

Methods of deposition of hydrogenated amorphous silicon for device applications

Sark

2002

Handbook of Thin Films

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“…The silicon film crystalline fraction was determined from Raman spectroscopy. Measured spectra were deconvoluted into the characteristic crystalline (520 cm -1 ) and amorphous (480 cm -1 ) peaks and the ratio of their areas used to compute the ratio of crystalline to amorphous silicon [25,26]. The films were also characterized by XRD, to determine the grain size and preferred orientation.…”

Section: Hot-wire Deposited Si Filmsmentioning

confidence: 99%

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices Including Concepts for The Development of Polycrystalline Multijunctions: Annual Report; 24 August 1998-23 August 1999

Birkmire¹,

Phillips²,

Shafarman³

et al. 2000

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SUMMARYThe overall mission of the Institute of Energy Conversion is the development of thin film photovoltaic cells, modules, and related manufacturing technology and the education of students and professionals in photovoltaic technology. The objectives of this 12 month NREL subcontract are to advance the state of the art and the acceptance of thin film PV solar cells in the areas of improved technology for thin film deposition, device fabrication, and material and device characterization and modeling, relating to solar cells based on CuInSe 2 and its alloys, on a-Si and its alloys, and on CdTe. CuInSe 2 -BASED SOLAR CELLS CIS-based Solar Cells with Improved ManufacturabilityFor solar cells based on thin film Cu(InGa)Se 2 to become a commercially viable technology, manufacturing costs must be reduced. One means to accomplish this is by reducing the substrate temperature at which the Cu(InGa)Se 2 layer is deposited This report addresses material and device issues related to reducing T ss from 550ûC to 400ûC for the deposition of Cu(InGa)Se 2 by physical vapor deposition using multisource elemental evaporation. The CuInGaSe 2 deposition sequence was varied to determine the effect of a Curich growth step, i.e., deposition with the Cu molar flux greater than the sum of the In and Ga fluxes. The connection between grain size, morphology, compositional uniformity, and device performance, as they are affected by substrate temperature and growth process, was investigated. The objective was to develop a process for improved device performance with T ss = 400ûC.Device results with T ss = 400ûC show that a Cu-rich growth step during the Cu(InGa)Se 2 deposition is needed for improved device performance. However, the film and device results are the same whether the Cu-rich growth occurs during the initial nucleation or later in the process. This indicates tolerance to different process sequences, which allows flexibility in deposition process design.Films grown at 550ûC have larger grains and give better performance than films deposited at 400ûC. But, with a given substrate temperature there is no simple correlation between grain size and device performance. At the lower temperature the improved cell results with Cu-rich growth cannot be explained by increased lateral grain size at the surface. Conversely, at the higher temperature, the increased grain size with the Cu-rich growth does not provide improved device performance.At T ss = 550ûC, the device performance is insensitive to the use of Cu-rich growth. A simple process with constant fluxes throughout the deposition gives as high a device efficiency as processes incorporating graded fluxes to give Cu-rich growth. At 400ûC, the uniform process gives more columnar grains but the same lateral grain size as the graded, Cu-rich processes. However, the best devices result from Cu-rich growth although not necessarily during the initial film nucleation.ii In-line Evaporation of Cu(InGa)Se 2In-line evaporation is a potentially effective means to achieve the high rate uniform dep...

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Structure and hydrogen content of stable hot-wire-deposited amorphous silicon

Cited by 21 publications

References 12 publications

The inverse Meyer–Neldel rule in thin-film transistors with intrinsic heterogeneous silicon

The inverse Meyer–Neldel rule in thin-film transistors with intrinsic heterogeneous silicon

Methods of deposition of hydrogenated amorphous silicon for device applications

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices Including Concepts for The Development of Polycrystalline Multijunctions: Annual Report; 24 August 1998-23 August 1999

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