Methods of deposition of hydrogenated amorphous silicon for device applications

Low resistivity amorphous carbon-based thin films employed as anti-reflective coatings on copper

“…It is well-known that the energy of the film-forming flux is a key factor influencing the microstructure, and affecting adsorption and other elementary processes during thin film growth [40,42,43]. At TSD = 2 cm, energetic particle bombardment increases the mobility of the adatoms, resulting in a denser and more homogenous structure of the coating [16]. On the other hand, at 10 cm the high P(z) results in thermalization and a reduced film density in Fig.…”

“…Indeed, the conduction band joins the valence band locally due to the sp 2 orbitals -the so-called pseudo-band gap. The size of the pseudo-band gap is indicative of the electrical properties of the amorphous C, depending on the mixture sp 2 -sp 3 in the films [9,15,16]. The optical properties of the amorphous carbon (a-C) are directly related to π→ π* and σ→ σ* electronic transitions, which determine the characteristic colour of the film, ranging from transparent if very few electronic transitions occur in the material to dark where many electronic transitions are simultaneously possible in the film.…”

Fabrication of nano-crystalline silicon thin film at low temperature by using a neutral beam deposition method

“…(The addition of an inert gas to the gas mixture of SiH 4 /H 2 increases the plasma density in the ICP source, due to the high ionization probability of the inert gas atoms.) Charge exchange reactions occur in the plasma between neutrals and ions such as Ne and Ne + , Ar and Ar + , Xe and Xe + , and these reactions can be represented by the following formula [12]:…”

Cargador De Móvil Para Bicicletas

“…Dadas las buenas propiedades que ofrece el silicio como ánodo para LIBs, como estrategia para resolver los problemas de expansión de su volumen durante la litiación y sus fatales consecuencias, desde la comunidad científica y en los departamentos de investigación de algunos fabricantes, se está trabajando en el crecimiento de materiales basados en silicio con diferentes tipo de nanoestructuras que sean capaces de acomodar eficientemente el litio, de modo que estos ánodos no sufran una pronta rotura (Sergio Pinilla et al 2020;Salah et al 2019Salah et al , 2021Szczech and Jin 2011;Yin et al 2012) En esta investigación (Barrio et al 2022), se ha propuesto el silicio amorfo hidrogenado (a-Si:H) depositado por la técnica de PECVD (Plasma Enhanced Chemical Vapour Deposition) ( Van Sark, 2002) en lámina delgada (inferior a una micra) como material alternativo a los electrodos basados en grafito . A diferencia del silicio cristalino, la estructura amorfa del a-Si:H y su elevada porosidad, permite soportar mejor los cambios de volumen, favoreciendo así la difusión de los iones litio dentro del material.…”