Structure and high dielectric permittivity of Li0.01M0.05Ni0.94O (M=V and W) ceramics

Chen, Guoju; Hsiao, Yu‐Jen; Chang, Yee‐Shin; Chai, Yuan

doi:10.1016/j.jallcom.2008.06.053

Cited by 17 publications

(6 citation statements)

References 19 publications

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“…Among the different element doped NiO, (Li, Fe) and (Li, V) doped NiO have shown to exhibit giant dielectric response [1,2]. The observation of high dielectric constant in doped NiO is attributed mainly to a grain boundary barrier layer capacitance [9,47,48], which can arise due to the formation of core/shell structure with conductive grain as core and resistive boundary as shell [1,2].…”

Section: Evolution Of Electrical Properties Of Nio With Transition Mementioning

confidence: 99%

Evolution of Structure, Microstructure, Electrical and Magnetic Properties of Nickel Oxide (NiO) with Transition Metal ion Doping

Mallick¹,

Mishra²

2012

MATERIALS

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We present a brief review on the evolution of structure, microstructure, electrical and magnetic properties of NiO with transition metal (TM) doping. The fcc structure of NiO is not affected with TM doping whereas the some of the TM ion influences the microstructure. The antiferromagnetic property of NiO is strongly modified with some of the TM (Fe, Mn, V) doping and the same is not much affected with some other TM (Co, Cr, Zn and Cu) doping. Not only the dopants but also the form of the material decides the magnetic order in the host matrix. Powder NiO exhibits room temperature ferromagnetism with Fe doping, superparamagnetism with Mn doping. NiO thin films on the other hand exhibit ferromagnetism with Fe, Mn and V doping. The ferromagnetic ordering in these cases was improved with Li co-doping. The increased ferromagnetism in these cases may be due to increase of hole concentration due to Li doping. Giant dielectric response has been observed for (Li, Fe) and (Li, V) doped NiO ceramics.

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Section: Evolution Of Electrical Properties Of Nio With Transition Mementioning

confidence: 99%

Evolution of Structure, Microstructure, Electrical and Magnetic Properties of Nickel Oxide (NiO) with Transition Metal ion Doping

Mallick¹,

Mishra²

2012

MATERIALS

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“…Recently, CaCu 3 Ti 4 O 12 (CCTO) [1][2][3][4][5] and (A, B)-codoped NiO systems with the formula A x B y Ni 1 À x À y O [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] have been actively investigated due to their extraordinarily high dielectric constants (ε r $ 10 4 -10 5 ) with weak temperature and frequency dependence. It has been widely thought that the boundary layer capacitors (BLCs) model is the most likely explanation of their dielectric behavior.…”

Section: Introductionmentioning

confidence: 99%

“…This is responsible for the high dielectric constant of such material systems, which can be tuned by changing the elements, A and B, in A x B y Ni 1 À x À y O materials. Numerous authors reported tuned compositions of A (i.e., Li [6][7][8][9][10][11][12][13], Na [14], K [19]) and B (i.e., Al [7,17], Si [22], Ti [6,9,10,15,18], W [13], V [13,20], Cr [8,21], Co [11], Zr [12], Fe [16], Pr [23], Ta [24]). NiO is a Mott-Hubbard insulator at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Influence of Cr doping on structure and dielectric properties of LixCryNi1−x−yO ceramics

Khemprasit

Khumpaitool

2015

Ceramics International

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“…Thus, the interior of grains is semiconducting in nature, while the shell of the grains or grain boundaries is an insulator, as one would expect for a boundary layer capacitor (BLC) structure. Many researchers have reportedly tuned the level and types of A (e.g., Li 5,7,[9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] , Na 6,27 , K [28][29][30][31] ) and B (e.g., Sn 5 , Ti 9,11,13,17,19,24 , Si 6,10 , Sc 12 , Al 14,16 , Ta 15 , Cr 7,20,21 , V [22][23][24] , W 23 , Fe 24 , Co 25 , Cu 26 ) additives. Varying their concentration by controlling th...…”

Section: Introductionmentioning

confidence: 99%

Structures and Properties of KxCryNi1-x-yO Dielectric Materials Prepared by an Ultrasonic-Assisted Sol-Gel Method

et al. 2021

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K x Cr y Ni 1-x-y O (x = 0.05-0.20, y = 0.02) dielectric materials were prepared using a facile simple green ultrasonic-assisted sol-gel method. All samples have a main phase consisting of a cubic NiO structure and with nanoscale crystallite sizes (28.58-37.51 nm). However, secondary phases were also observed for the samples with x values exceeding 0.10. The fractured surface microstructures of the samples with x values less than 0.15 exhibited uniformly distributed spherical grains. Other samples showed irregularly shaped grains. The grain sizes were larger when x was increased to 0.15 and exhibited increased grain growth probably due to substitution of K ions into the NiO lattice. However, a reduction of grain sizes was observed in the sample with x = 0.20, possibly due to inhibition of the grain growth by the secondary phase. At room temperature and a frequency of 1013 Hz, the highest dielectric constant of 2.25 × 10 4 was obtained for the samples with x = 0.15.

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Structure and high dielectric permittivity of Li0.01M0.05Ni0.94O (M=V and W) ceramics

Cited by 17 publications

References 19 publications

Evolution of Structure, Microstructure, Electrical and Magnetic Properties of Nickel Oxide (NiO) with Transition Metal ion Doping

Evolution of Structure, Microstructure, Electrical and Magnetic Properties of Nickel Oxide (NiO) with Transition Metal ion Doping

Influence of Cr doping on structure and dielectric properties of LixCryNi1−x−yO ceramics

Structures and Properties of KxCryNi1-x-yO Dielectric Materials Prepared by an Ultrasonic-Assisted Sol-Gel Method

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