Influence of Cr doping on structure and dielectric properties of LixCryNi1−x−yO ceramics

Khemprasit, Jinda; Khumpaitool, Bualan

doi:10.1016/j.ceramint.2014.08.119

Cited by 31 publications

(12 citation statements)

References 27 publications

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“…3(a). The observed high dielectric constant in the low-frequency range is caused by the space polarization as was also demonstrated in the NiO-based system 6 . Fortunately, the dielectric constant increases by several magnitudes when the co-doping concentration is higher than 0.01.…”

Section: Resultssupporting

confidence: 64%

“…Furthermore, the reported work verified that CCTO ceramics display poor stability of their dielectric properties when they were subjected to frequency and temperature variations. Worse still, large dielectric loss and high variation of dielectric constant with temperature impeded the practical application of NiO-based system 6–9, 11 . Therefore, huge efforts need to be input in searching for new CP materials which can maintain high dielectric constant and low dielectric loss under a wide range of temperature and frequency.…”

Section: Introductionmentioning

confidence: 99%

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Dielectric properties of Y and Nb co-doped TiO2 ceramics

Wang

Zhang

et al. 2017

Sci Rep

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In this work, the (Y0.5Nb0.5)xTi1−xO2 (x = 0.001, 0.01, 0.02, 0.04, 0.06 and 0.1) ceramics (as called YNTO) were fabricated by synthesized through a standard solid-state reaction. As revealed by the X-ray diffraction (XRD) spectra, the YNTOs exhibit tetragonal rutile structure. Meanwhile, the grain size of YNTO ceramics increased and then decreased with the increase of x value, and the largest value reached when x = 0.02. All the YNTO samples display colossal permittivity (~102–105) over a wide temperature and frequency range. Moreover, the optimal ceramic, (Y0.5Nb0.5)0.02Ti0.98O2, exhibits high performance over a broad temperature range from 20 °C to 180 °C; specifically, at 1 kHz, the dielectric constant and dielectric loss are 6.55 × 104 and 0.22 at room temperature, and they are 1.03 × 105 and 0.11 at 180 °C, respectively.

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Section: Resultssupporting

confidence: 64%

Section: Introductionmentioning

confidence: 99%

Dielectric properties of Y and Nb co-doped TiO2 ceramics

Wang

Zhang

et al. 2017

Sci Rep

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“…The high dielectric constant of these materials is attributed to the semiconducting grain (K doped NiO) surrounded by Ti-rich insulating grain boundary, as found in BLC model. This behavior is similar to that found for a tuned B addition in doped NiO systems 5,6,21 . In our previous study, we reported the influence of Cr doping on the structure and dielectric properties of Li x Cr y Ni 1-x-y O ceramics with varying the concentrations of Cr as 0.02, 0.05 and 0.10 mole 21 .…”

Section: Introductionsupporting

confidence: 87%

“…This behavior is similar to that found for a tuned B addition in doped NiO systems 5,6,21 . In our previous study, we reported the influence of Cr doping on the structure and dielectric properties of Li x Cr y Ni 1-x-y O ceramics with varying the concentrations of Cr as 0.02, 0.05 and 0.10 mole 21 . The concentration of Cr dopant is 0.02 mole and has the highest dielectric constant (ε r ~ 10 5 at room temperature) over a wide frequency range.…”

Section: Introductionsupporting

confidence: 87%

“…Thus, the interior of grains is semiconducting in nature, while the shell of the grains or grain boundaries is an insulator, as one would expect for a boundary layer capacitor (BLC) structure. Many researchers have reportedly tuned the level and types of A (e.g., Li 5,7,[9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] , Na 6,27 , K [28][29][30][31] ) and B (e.g., Sn 5 , Ti 9,11,13,17,19,24 , Si 6,10 , Sc 12 , Al 14,16 , Ta 15 , Cr 7,20,21 , V [22][23][24] , W 23 , Fe 24 , Co 25 , Cu 26 ) additives. Varying their concentration by controlling th...…”

Section: Introductionmentioning

confidence: 99%

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Structures and Properties of KxCryNi1-x-yO Dielectric Materials Prepared by an Ultrasonic-Assisted Sol-Gel Method

et al. 2021

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K x Cr y Ni 1-x-y O (x = 0.05-0.20, y = 0.02) dielectric materials were prepared using a facile simple green ultrasonic-assisted sol-gel method. All samples have a main phase consisting of a cubic NiO structure and with nanoscale crystallite sizes (28.58-37.51 nm). However, secondary phases were also observed for the samples with x values exceeding 0.10. The fractured surface microstructures of the samples with x values less than 0.15 exhibited uniformly distributed spherical grains. Other samples showed irregularly shaped grains. The grain sizes were larger when x was increased to 0.15 and exhibited increased grain growth probably due to substitution of K ions into the NiO lattice. However, a reduction of grain sizes was observed in the sample with x = 0.20, possibly due to inhibition of the grain growth by the secondary phase. At room temperature and a frequency of 1013 Hz, the highest dielectric constant of 2.25 × 10 4 was obtained for the samples with x = 0.15.

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Colossal Permittivity Materials as Superior Dielectrics for Diverse Applications

Wang

Jie

Yang

et al. 2019

Adv Funct Materials

146

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Ever since the beginning of this century, many kinds of materials have been reported to demonstrate colossal permittivity (CP) or colossal dielectric constant exceeding 10 3 . Accordingly, such CP materials and their further modification and improvement to achieve enhanced CP performance for promising applications in modern electronics, sensors, energy storage, and multifunctional devices and so on have attracted extensive attention. In this review, 2 a general overview of the recent advances in CP materials is provided, ranging from their various categories, physical mechanisms, and modulation methods to promising applications.First, various classes of CP materials are categorized in terms of their structures and dielectric properties. Subsequently, this review provides an insight into the CP mechanisms in views of barrier layer capacitance, defect-dipole cluster and polaronic effect. Moreover, the strategies and prototypical works are introduced in some aspects, including the manipulation of CP properties by doping, percolative capacitors and the methods employed to enhance the dielectric behaviors in CP materials with different forms. We then discuss a wide range of applications based on CP materials, such as modern electronics and energy storage. Finally, the challenges and opportunities for further investigation of CP materials are highlighted in the summary and future perspectives.

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Influence of Cr doping on structure and dielectric properties of LixCryNi1−x−yO ceramics

Cited by 31 publications

References 27 publications

Dielectric properties of Y and Nb co-doped TiO2 ceramics

Dielectric properties of Y and Nb co-doped TiO2 ceramics

Structures and Properties of KxCryNi1-x-yO Dielectric Materials Prepared by an Ultrasonic-Assisted Sol-Gel Method

Colossal Permittivity Materials as Superior Dielectrics for Diverse Applications

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