Structure and Electron-Transport Properties of Photoresist Implanted by Sb⁺Ions

Abstract

Morphology and electron-transport properties in the photoresist-silicon structures implanted by 60 keV antimony in the fluence range 1 × 10 15 ÷ 5 × 10 16 cm −2 with the ion current density 4 µA/cm 2 have been investigated. Microhardness increases with the increasing fluence. Non-monotonous dependence of microhardness on the depth in the implanted structures was observed. Transition from insulating to the metallic regime of conductivity was not observed.