Structure and electrical properties of Ta films sputtered in ArO2

Feinstein, L.G.; Gerstenberg, D.

doi:10.1016/0040-6090(72)90273-8

Cited by 27 publications

(10 citation statements)

References 16 publications

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“…Thin tantalum films and contacts may play a key role in future micro-and nanoelectronic devices due to their high stiffness and corrosion resistance [1][2][3][4]. For this reason, the preparation of thin tantalum films seems to be of continuing interest despite the vast literature in the last four decades [5][6][7][8][9][10][11][12]. These earlier works were mainly focused on the macroscopic properties of the films.…”

Section: Introductionmentioning

confidence: 99%

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Preparation and properties of thin amorphous tantalum films formed by small e-beam evaporators

Stella

Bürstel

Franzka

et al. 2009

J. Phys. D: Appl. Phys.

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Large area (A = 6 cm 2), thin tantalum films (5 nm < d < 100 nm) are accomplished by evaporation from tantalum rods using small pocket e-beam evaporators. Using a sample to source distance of ≈20 cm, homogeneous amorphous films with a small surface roughness (<1 nm) can be prepared on glass. Films are characterized by scanning electron microscope images, atomic force microscopy, electrochemical oxidation and resistivity measurements as a function of film thickness. The samples show high resistivities of 200-2000 µ cm. The temperature coefficient of the resistivity (TCR) is negative, as characteristic for highly disordered metals. A theoretical description of the thickness distribution (evaporation from plane and hemispherical sources on plane targets) is given in the appendix.

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Section: Introductionmentioning

confidence: 99%

“…• Low resistivity (10-60 µ cm) α-tantalum in body centred cubic phase [17,18]. • High resistivity (100-200 µ cm) β-tantalum in the tetragonal phase [12,14,19,20]. • Completely amorphous films (>200 µ cm) [16].…”

Section: Introductionmentioning

confidence: 99%

Preparation and properties of thin amorphous tantalum films formed by small e-beam evaporators

Stella

Bürstel

Franzka

et al. 2009

J. Phys. D: Appl. Phys.

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“…The major metallic impurities found in the bulk were Mg, Al, Si. The isotopes of Mg (24,25,26) and Si (28,29,30) are clearly resolved (see Figure 9). These major metallic impurities (Al, Si, Mg) were not homogeneously distributed in the films (see Figure 10) and the results obtained on different areas of the same films varied by ±30%.…”

Section: T H I S C O N T E N T Imentioning

confidence: 92%

“…The errors introduced by the uncertainties in the high mass adsorption coefficients for these lines are currently being investigated.) The crystal structure of this film as determined by X-ray analysis was bcc (30). The crystal structure of the nonreactively sputtered film (sample a) was identified by X-ray analysis to be d-Ta (30).…”

Section: T H I S C O N T E N T Imentioning

confidence: 94%

Secondary ion emission for surface and in-depth analysis of tantalum thin films

Morabito¹,

Lewis²

1973

Anal. Chem.

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The Cameca Ion Microanalyzer has been used to analyze the surface and bulk of a number of sputtered tantalum thin films. This technique of chemical analysis has unique analytical capabilities which are based on the emission and subsequent mass analysis of characteristic secondary ions ejected by high energy (several K e V ) ion bombardment. The results obtained on sputtered tantalum films, reactively sputtered (argon.oxygen, argonsnitrogen mixtures) tantalum films, and oxidized tantalum films are presented to demonstrate these unique analytical capabilities. Quantitative analysis by this method is shown to depend on the accurate and reproducible measurement of characteristic parameters s u c h a s t h e secondary ion current of the impurity ( i a i ) and the secondary ionization yield of the impurity relative to t h e matrix (Krel). The magnitude of Krel is best determined by the use of standards.This paper describes and critically evaluates a relatively new analytical technique, Secondary Ion Emission, for localized surface and bulk thin film analysis and to present a method of performing quantitative analysis by the use of standards. This technique of chemical analysis is based on the emission and subsequent mass analysis of characteristic secondary ions which are ejected from a sample due to bombardment by a high energy (several KeV) ion beam. All elements and their isotopes can be detected by mass spectroscopy with a sensitivity in the ppm range, and for some elements in the ppb range. With this technique, ion images providing spatial elemental distribution of the sample can also be obtained with approximately -1 pm resolution. In-depth analysis can also, be performed. The in-depth analysis is accomplished by a controlled and gradual sputtering of the sample, and in-depth resolutions better than 100 A have been reported ( I ) .Results have been obtained for T a films sputtered in argon, argon-nitrogen, argon-oxygen mixtures, and for thermally oxidized films which demonstrate the unique capabilities of the technique for both bulk and surface analysis. Equations for quantitative analysis have been developed. These equations require the use of standards, are empirical, and are not based on a model of secondary ion emission. In addition, the capabilities and limitations of secondary ion emission for surface analysis are presented along with complementary results on surface impurities detected on similar tantalum films by Auger Electron Spectroscopy.

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“…In general, transitions from a ß-Ta (4) structure to a mixture of (J-Ta and bcc-Ta, and finally to a single phase bcc (bulk) region followed by oxide, nitride, or carbide formation have been observed. These structural transformations have been studied by X-ray diffraction techniques (1,2,5). Quantitative information on the amount of these light elements in tantalum, assuming a homogeneous distribution, has been provided by electron microprobe analysis (7).…”

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confidence: 99%

Quantitative analysis of light elements (nitrogen, carbon, and oxygen) in sputtered tantalum films by Auger electron spectroscopy and secondary ion mass spectrometry (SIMS)

Morabito¹

1974

Anal. Chem.

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3He,xn) reactions. For example, our Bi + 3He reaction studies revealed that 685-and 660-keV photopeak intensities of 208At produced by the 209Bi(3He,4n)208At reaction are =« 10 times higher than the 992-keV peak intensity. In other words, bismuth-if indeed present-can clearly be determined via the 208At gamma rays. No other element can produce this nuclide. Alternatively, if the analysis is made on a matrix with a high Bi/Pb concentration ratio, the Bi interference can be completely eliminated by bombardments near 25 MeV, which is lower than the threshold energy for production of 207Po via Bi + 3He reactions.Estimate of Detection Limit. Under the following conditions: beam current 3.8 µ A, length of bombardment 1.5 hr, overall detection efficiency 0.5%, we were able to detect Pb concentrations of 45 ng/cm2 in an A1 matrix (Figure 2). The background constituted only about %0 of the total 992-keV peak area; at equal signal to background levels, under our easy conditions, we could detect 4.5 ng/ cm2 lead. Because the beam intensity can be increased by a factor of 10 (or greater, depending on the target matrix), detection coefficients can be easily doubled, and the length of bombardment can be increased to at least one 207Po halflife, the detection limit can be lowered to about 50 pg/ cm2 lead. If the matrix in which lead is imbedded is 10 to 100 mg/cm2 thick, the concentration limit of detection would therefore be 5 ppb to 0.5 ppb, respectively.It should be pointed out that for the analysis of paper, the detection limit is held down to only 1 ppm, under our present target-cooling system. ACKNOWLEDGMENTThe authors wish to thank Diana M. Lee for her assistance during this work.

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Structure and electrical properties of Ta films sputtered in ArO2

Cited by 27 publications

References 16 publications

Preparation and properties of thin amorphous tantalum films formed by small e-beam evaporators

Preparation and properties of thin amorphous tantalum films formed by small e-beam evaporators

Secondary ion emission for surface and in-depth analysis of tantalum thin films

Quantitative analysis of light elements (nitrogen, carbon, and oxygen) in sputtered tantalum films by Auger electron spectroscopy and secondary ion mass spectrometry (SIMS)

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