Structure and electrical properties of AlN films prepared on PZT films by the DC reactive magnetron sputtering

Highly c-axis oriented AlN film grown by unbalanced magnetron reactive sputtering and its electrical properties

“…To control and optimize these properties is an important and active subject for the growth of AlN films. AlN films can be prepared by various techniques such as chemical vapor deposition (CVD) [6,7], reactive magnetron sputtering [1,8], molecular beam epitaxy (MBE) [9,10], ion beam-assisted deposition, and metal organic chemical vapor deposition (MOCVD) [11].…”