Highly c-axis oriented AlN film grown by unbalanced magnetron reactive sputtering and its electrical properties

Ke, Genshui; Yuan, Tao; Lu, Yisheng; Bian, Yingbin; Zhu, Tao; Guo, Haibo; Chen, Yigang

doi:10.1016/j.jallcom.2015.05.174

Cited by 27 publications

(9 citation statements)

References 38 publications

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“…With the increased in sputtering power, more particles attained sufficient energy to reach onto the substrate surface, and hence, increases the growth rate of the CuO film. As a result, the grain size of deposited sample becomes larger, 33 compared to the samples prepared with lower sputtering power.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Nanocrystal Engineering of Sputter-Grown CuO Photocathode for Visible-Light-Driven Electrochemical Water Splitting

Masudy‐Panah

Moakhar

Chua

et al. 2016

ACS Appl. Mater. Interfaces

168

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Cupric oxide (CuO) thin film was sputtered onto fluorine-doped tin oxide (FTO) coated glass substrate and incorporated into a photoelectrochemical (PEC) cell as a photocathode. Through in situ nanocrystal engineering, sputtered CuO film shows an improvement in its stability and photocurrent generation capability. For the same CuO film thickness (150 nm), films deposited at a sputtering power of 300 W exhibit a photocurrent of ∼0.92 mAcm(-2) (0 V vs RHE), which is significantly higher than those deposited at 30 W (∼0.58 mAcm(-2)). By increasing the film thickness to 500 nm, the photocurrent is further enhanced to 2.5 mAcm(-2), which represents a photocurrent conversion efficiency of 3.1%. Systematic characterization using Raman, XRD, and HR-TEM reveals that the high sputtering power results in an improvement in CuO film crystallinity, which enhances its charge transport property and, hence, its photocurrent generation capabilities.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Nanocrystal Engineering of Sputter-Grown CuO Photocathode for Visible-Light-Driven Electrochemical Water Splitting

Masudy‐Panah

Moakhar

Chua

et al. 2016

ACS Appl. Mater. Interfaces

168

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“…The deposition methods used in this study are ones commonly used to deposit AlN thin films. Of these, reactive sputtering is perhaps the most used method and generally results in moderately high-quality polycrystalline and textured films with moderate stresses [53,54]. Possible defects include argon incorporation and damage from ion bombardment [55].…”

Section: Discussionmentioning

confidence: 99%

Mechanical properties and reliability of aluminum nitride thin films

Österlund

Kinnunen

Rontu

et al. 2019

Journal of Alloys and Compounds

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“…Our observation is in contrast with the trend that is reported in literature. Liu [30] and Kee et al [31] found that the grain size increases at higher sputtering power. They contribute it to higher deposition rate of the film.…”

Section: Resultsmentioning

confidence: 96%

Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power

Iqbal

Walker

Hold

et al. 2019

J Mater Sci: Mater Electron

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We perform pulsed DC sputtering of aluminium nitride (002) thin films on top of cubic silicon carbide-on-silicon (100) substrates at different substrate temperatures and deposition powers. The films are characterised using the following parameters: FWHM of diffraction peak, FWHM of the rocking curve, residual stress, thickness, deposition rate, grain size, and surface roughness. The overall quality of the films improve at escalated temperature and power. However, they have hillocks on the surface, which is caused by high amount of tensile stress.

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Highly c-axis oriented AlN film grown by unbalanced magnetron reactive sputtering and its electrical properties

Cited by 27 publications

References 38 publications

Nanocrystal Engineering of Sputter-Grown CuO Photocathode for Visible-Light-Driven Electrochemical Water Splitting

Nanocrystal Engineering of Sputter-Grown CuO Photocathode for Visible-Light-Driven Electrochemical Water Splitting

Mechanical properties and reliability of aluminum nitride thin films

Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power

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