Structure and Electrical Properties of Titanium Nitride Films

Igasaki, Yasuhiro; Mitsuhashi, Hiroji; Azuma, Koichi; Muto, Tokio

doi:10.1143/jjap.17.85

Cited by 63 publications

(16 citation statements)

References 7 publications

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“…This allows us t o explain the formation of the silicide in this type of specimens. In fact, as reported in the literature [14,151, the stable phase of titanium nitride, which has a face-centred cubic structure, begins t o form for nitrogen concentrations in excess of 35 t o 38 atye. This confirms what was suggested in our previous works [3, 41, i.e.…”

Section: A -T Y P E Specimenssupporting

confidence: 51%

Nitrogen Profiles of Ion-Implanted TiN Films by Electron Energy Loss Spectroscopy

Aemigliato¹,

Queirolo

Valdbè

1986

phys. stat. sol. (a)

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Titanium nitride (TiN) films are prepared by implanting 40 keV N 2+ ions in silicon wafers coated with 60 and 80 nm thick titanium layers. These films are of interest as diffusion barriers in metal‐lization schemes for very large scale integrated devices. After the implant, the specimens are annealed in vacuum either at 700 or 800°C, giving rise to the formation of a TiSi2 film at the TiN/Si interface in the 80 nm thick nitride layer. No such silicide film grows in the case of the 60 nm thick nitride layer. This phenomenon is related to the different concentrations of nitrogen at the TiN/Si interface in the two cases. Measurements of the nitrogen profile by electron energy loss spectroscopy (EELS), performed in a dedicated STEM on cross‐sectioned specimens, shows that in the thicker films, where the TiSi2 formation occurs, the nitrogen concentration at the TiN/Si interface is lower than about 35 at%; this is, in turn, reported to be the threshold concen‐tration for the formation of the stable f.c.c. phase of titanium nitride. The thinner nitride films are subsequently coated with an aluminium overlayer, about 1 μm thick, and then annealed in N2 at 600°C for 30 min; this treatment is known from previous works to result in the degradation of the diffusion barrier. The corresponding morphology of this Al/TiN/Si structure and the nitrogen profile are presented.

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Section: A -T Y P E Specimenssupporting

confidence: 51%

Nitrogen Profiles of Ion-Implanted TiN Films by Electron Energy Loss Spectroscopy

Aemigliato¹,

Queirolo

Valdbè

1986

phys. stat. sol. (a)

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“…This tendency towards smaller grain sizes is typical of highly saturated metal -metalloid alloys and can be described by the Gibbs -Thomson equation [38]. Oversaturation under non-equilibrium conditions often leads to vanishing lattice order [17], inducing an increase in the deposition rates. This is the case here where an increase in this parameter is observed for the films with the lowest N concentration ( < 10 at.%) (Fig.…”

Section: Structural Characterizationmentioning

confidence: 99%

Influence of nitrogen content on the structural, mechanical and electrical properties of TiN thin films

Vaz

Ferreira

Ribeiro

et al. 2005

Surface and Coatings Technology

149

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This paper reports on the preparation of TiN x thin films by d.c. reactive magnetron sputtering. The coating thickness ranged from 1.7 to 4.2 Am and the nitrogen content varied between 0 and 55 at.%. X-Ray diffraction showed the development of the hexagonal a-Ti phase, with strong [002] orientation for low nitrogen contents, where the N atoms fit into octahedral sites in the Ti lattice as the amount of nitrogen is increased. For nitrogen contents of 20 and 30 at.%, the q-Ti 2 N phase appears with [200] orientation. With further increasing the nitrogen content, the y-TiN phase becomes dominant. The electrical resistivity of the different compositions reproduces this phase behavior. The hardness of the samples varied from approximately 8 GPa for pure titanium up to 27 GPa for a nitrogen content of 30 at.%, followed by a slight decrease at the highest contents. A similar increase of stresses with nitrogen is observed. Structure and composition with the consequent changes in crystalline phases and the lattice distortion were found to be crucial in the evolution of the mechanical properties.

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“…Even though there are advances in growth of this material, significant challenges remain for practical device applications. Film properties can be tuned by controlling the flow of N2 [7], substrate temperature [8]- [9], chamber pressure, and distance between the target and the substrate [10], some of which were grown with a 100V DC bias [8]. However, some of the best TiN films exhibit non-uniform resistivity, TC, and crystalline phases [10], and contain oxygen contaminants [11].…”

Section: Introductionmentioning

confidence: 99%

Superconducting TiN Films Sputtered Over a Large Range of Substrate DC Bias

Jaim

Aguilar

Sarabi

et al. 2015

IEEE Trans. Appl. Supercond.

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We have investigated properties of superconducting titanium nitride (TiN) films that were sputtered over a large range of RF-induced DC bias voltage applied to the substrate. Films grown with the largest bias voltages contained cubic TiN phases with a large fraction of the (200) crystalline growth orientation. These films also contained the smallest concentrations of oxygen impurities, resulting in stoichiometric TiN. Over the range of bias, variations of the stress from slightly tensile to highly compressive were measured and correlated to crystallinity of the (200) growth. The films exhibited highly uniform thickness and resistivity, and show the potential for yielding reproducible low-temperature devices. Finally, coplanar resonators fabricated with the films exhibited high kinetic inductance and quality factor, where the latter was obtained in part from temperature-dependent frequency shifts.

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Structure and Electrical Properties of Titanium Nitride Films

Cited by 63 publications

References 7 publications

Nitrogen Profiles of Ion-Implanted TiN Films by Electron Energy Loss Spectroscopy

Nitrogen Profiles of Ion-Implanted TiN Films by Electron Energy Loss Spectroscopy

Influence of nitrogen content on the structural, mechanical and electrical properties of TiN thin films

Superconducting TiN Films Sputtered Over a Large Range of Substrate DC Bias

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