Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon

Abstract

Diffraction patterns obtained from atomically clean germanium surfaces contained half-integral order beams in (110) azimuths for both (100) and (110) surfaces and in all azimuths for the (111) surface. These results are considered to be due to displacements of surface atoms from their normal bulk lattice positions in the surface plane. Adsorption of oxygen on all of these surfaces extinguished all of the diffraction beams which were not integral order.In addition to the normal surface lattice spacings of clean (111) and (100) surfaces of silicon, there were surface structures with larger spacings, most of which depended on the conditions of ion bombardment and/or subsequent heat treatment. Two such structures have been observed for the (100) surface of silicon; one is a double-spaced lattice in the (110) azimuth, similar to that for germanium, and the other has a spacing about 8% greater than that of normal silicon and was obtained onlv after radiation quenching of the crystal from 1000°C. Two large-spaced

Self-assembly of Fe nanocluster arrays on templated surfaces

“…[5][6][7] Surfaces such as the Ge(001)-(2 Â 1) reconstructed surface and the MoO 2 /Mo(110) surface exhibit well-defined nanorows formed by Ge dimers and Mo oxide, respectively. 8,9 Such surfaces are suitable templates for the growth of well-ordered, uniformly sized metal nanoclusters. 10,11 In the present work we use the Ge(001)-(2 Â 1) reconstructed surface and the MoO 2 /Mo(110) surface as templates for the growth of ordered arrays of Fe nanoclusters.…”

Transformation of Cl bonding structures on Si(100)-(2×1)

“…1 Fundamental interest has been focused on (1) the bonding of atomic species with the highly directional surface dangling bonds, 2 and (2) surface restructuring induced by the adsorbate. 3 In chemisorption, the surface trades off energy lost by local bond formation with energy gained by elastic distortion of substrate atoms in search of the lowest free energy bonding configuration.…”

On the structure of Si(100) surface: Importance of higher order correlations for buckled dimer

“…9 Spectroscopy and STM experiments suggested that the most stable configuration of silicon (100) surface around 100 K is the c(4 × 2) arrangement in buckled structure. [10][11][12][13] In 2000, however, the STM and AFM measurements indicated the p(2 × 1) symmetric image below 80 K. 6,[14][15][16] Also, LEED measurements below 40 K reported the same structural a) Author to whom correspondence should be addressed.…”