Structure analysis of silicon dioxide films formed by oxidation of silane

Nagasima, Naoyuki

doi:10.1063/1.1661723

Cited by 46 publications

(11 citation statements)

References 21 publications

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“…Previous structural analyses on CVD silicon-dioxide films 18 showed that the average configuration of an SiO 4 tetrahedron, a building block of a continuous random network comprising amorphous silicon dioxide, remains largely unaffected by low-temperature deposition process. In contrast, the root-mean-square deviations in the inter-atomic distances and bond angles, which can serve as one measure of the structural disorder, were found to be considerably larger for as-deposited films than for high-temperature annealed films.…”

Section: Discussionmentioning

confidence: 99%

“…In contrast, the root-mean-square deviations in the inter-atomic distances and bond angles, which can serve as one measure of the structural disorder, were found to be considerably larger for as-deposited films than for high-temperature annealed films. 18 These types of structural disorder are expected to most significantly affect the relaxation of vibrational excitations with wavelengths comparable to the bond lengths, a few angstroms in the case of silicon dioxide. The minimum thermal conductivity model 19 indicated that the effective mean free path of heat carriers is of the order of interatomic separations in amorphous materials.…”

Section: Discussionmentioning

confidence: 99%

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Process-dependent thermal transport properties of silicon-dioxide films deposited using low-pressure chemical vapor deposition

Goodson

1999

Journal of Applied Physics

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The volumetric heat capacity and thermal conductivity of silicon-dioxide films prepared using low-pressure chemical vapor deposition ͑LPCVD͒ are measured. The measurements employ the 3 technique, which is extended to determine the thermal conductivity anisotropy and volumetric heat capacity of thin dielectric films. The thermal conductivity of the silicon-dioxide films exhibits a significant process dependence, which cannot be attributed to highly oriented microvoids or impurities. The volumetric heat capacity, in contrast, is largely independent of processing history provided that appropriate corrections are made to account for porosity and impurity contributions. This study provides evidence that process-dependent structural disorder strongly influences the thermal conductivity of amorphous films.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Process-dependent thermal transport properties of silicon-dioxide films deposited using low-pressure chemical vapor deposition

Goodson

1999

Journal of Applied Physics

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“…It can be seen that the LPCVD-deposited LTO has different optical properties to thermally grown SiO 2 (continuous line). This is due to the different internal structure of the LTO, characterized by an increased porosity and disordered SiO 4 tetrahedra [26,27]. Furthermore, this distorted internal structure might also cause the LPCVD-deposited oxides to be non-ideal, slightly absorbing materials.…”

Section: Optical Properties Of Lpcvd Oxidesmentioning

confidence: 99%

Silicon Photodetectors with a Selective Spectral Response

Wolffenbuttel

2001

Sensors Update

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Silicon photodetectors with a spectral response defined by design are described. Micromachining technologies in general and two properties of an integrated silicon photodetector in particular are used for that purpose. Firstly, the wavelength dependence of the absorption coefficient is exploited. Secondly, use is made of the fact that a multi-layer interference filter on top of a pn-junction comes with silicon wafer processing.The silicon complex index of refraction, n Ã n À jk, is wavelength dependent in the visible part of the spectrum due to the indirect bandgap at 1.12 eV and the possibility for a direct transition at 3.4 eV, which causes the material to strongly absorb UV light and to almost behave like a transparent material for wavelengths beyond 800 nm. This mechanism enables the design of color sensors and photodiodes with an IR or UV selective response.The transmission of incident light through a surface stack of thin films into the bulk silicon is wavelength dependent. The required compatibility with standard microelectronic processing in silicon limits the range of suitable materials to the silicon-compatible materials conventionally used for integrated circuit fabrication. Accurate data on: crystalline Si, thermally grown SiO 2 , LPCVD polysilicon, silicon nitride (lowstress and stoichiometric) and oxides (LTO, PSG, BSG, BPSG), PECVD oxynitrides and thin-film metals are provided to improve the predictive quality of simulations.In case of a complete microspectrometer, micromachining steps are usually applied for the realization of a dispersion element. Devices operating in the visible or IR spectral range and based on a grating or a Fabry-Perot etalon are presented.

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“…However, the detailed behavior of the film densities may differ from that of the refractive indexes. The asdeposited samples have densities in the range 2.0-2.22 g-cm -3, not very different from those of bulk SiO2 glass (8) and those of thermally grown SiO2 (9), or from other reported values for CVD SiO2 films (9,10). Samples collected on stainless steel wafers are slightly more dense than the CVD films on Si wafers.…”

Section: Fig 3 a Refractive Index Of Lpcvd Sio~ Films Deposited Atmentioning

confidence: 86%

Thermochemical and Spectroscopic Studies of Chemically Vapor‐Deposited Amorphous Silica

Huffman

Navrotsky

Pintchovski

1986

J. Electrochem. Soc.

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Two kinds of low pressure CVD SiO2 samples, heterogeneous film and homogeneous "snow," have been collected on stainless steel substrates at three different deposition temperatures: 523, 643, and 703 K. They have been characterized thermodynamically by transposed temperature drop and high temperature solution calorimetry. Both film and "snow" samples are metastable--in terms of enthalpy relative to bulk SiO2 glass--by up to 101 k J-tool-'. The excess enthalpy increases with decreasing deposition temperature and is larger for "snows" than for films. On annealing at high temperatures, it gradually disappears. IR and Raman spectroscopies indicate that both Si-H and St-OH species are present in the as-deposited samples but disappear upon annealing. All as-deposited samples have densities comparable to bulk SiO~ glass, i.e., between 2.0 and 2.2 g-cm-:~. Annealing tends to increase the density of all samples.Various doped silica glasses (SiO2-P~O5, SiO.,-B,O:,,. SiO.,-As~O:, etc., with dopant concentrations of up to 20 mole percent) are widely used in the semiconductor industry either as dielectrics (1) or as final passivation layers (2, 3). One of the major methods of obtaining these glasses as thin films is low pressure chemical vapor deposition (LPCVD) (4). Two kinds of amorphous sample can be obtained from a hot wall LPCVD furnace: thin films heterogeneously deposited on the substrate in the central hot zone and homogeneously deposited reactive powder adhering to the furnace walls at the cooler ends of the deposition tube. The term "snow" will be used throughout this paper as a common name describing these powdery SiO2 CVD deposits.Since the basis of many doped-glass systems is SiO2, calorimetric and spectroscopic studies have been carried out on both thin film and snow LPCVD SiO~. High temperature calorimetry has been utilized to obtain thermodynamic data. Scanning electron microscopy and IR and Raman spectroscopies (5) have been used for structural characterization. This paper will show that significant differences in energetics, structure, and properties exist between low temperature-deposited SiO2 and normal bulk SiO_, glass. The main focus of this study is on a general understanding of the variation of properties of CVD SiO~ over a wide range of preparation and annealing conditions, rather than on the optimization of properties over a smaller range of processing conditions used by the semiconductor industry. ExperimentalLPCVD and annealing.---All samples were prepared using a standard LPCVD system. In this study, -0.4-0.5 mm thick stainless steel wafers, of 100 mm diam, were used as substrates, enabling the deposited film to be peeled off the wafer by a simple bending motion. The wafers stood vertically, facing the ends of the deposition tube. The wafer spacing was typically 3-5 mm. Both films and snows were obtained in a single run. In the apparatus used, the input gas flow rates were measured and controlled by rotameter-type flowmeters. The gases used were Sill4 and 02, which react in the hot reaction chamber...

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Structure analysis of silicon dioxide films formed by oxidation of silane

Cited by 46 publications

References 21 publications

Process-dependent thermal transport properties of silicon-dioxide films deposited using low-pressure chemical vapor deposition

Process-dependent thermal transport properties of silicon-dioxide films deposited using low-pressure chemical vapor deposition

Silicon Photodetectors with a Selective Spectral Response

Thermochemical and Spectroscopic Studies of Chemically Vapor‐Deposited Amorphous Silica

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