Process-dependent thermal transport properties of silicon-dioxide films deposited using low-pressure chemical vapor deposition

Abstract

The volumetric heat capacity and thermal conductivity of silicon-dioxide films prepared using low-pressure chemical vapor deposition ͑LPCVD͒ are measured. The measurements employ the 3 technique, which is extended to determine the thermal conductivity anisotropy and volumetric heat capacity of thin dielectric films. The thermal conductivity of the silicon-dioxide films exhibits a significant process dependence, which cannot be attributed to highly oriented microvoids or impurities. The volumetric heat capacity, in contrast, is largely independent of processing history provided that appropriate corrections are made to account for porosity and impurity contributions. This study provides evidence that process-dependent structural disorder strongly influences the thermal conductivity of amorphous films.

Decoupled thermal resistances of phase change material and their impact on PCM devices

“…The thermal boundary resistance is measured to be 29 20×10 -9 m 2 KW -1 , which is equivalent to 30 nm of SiO 2 layer. This value matches closely with the literature data of interfacial resistance for SiO 2 layer [11,17]. The resistance due to microstructural defects is measured as large as 78×10 -9 m 2 KW -1 that amounts to 25 % of the intrinsic thermal resistance of GST.…”

“…The thermal conductivity and the heat capacity of the 3Pm SiO 2 layer are measured to be 1.41 W/mK and 1.99x10 6 J/mK, and the thermal conductivity of the 75 nm Si 3 N 4 layer is measured to be 2.0 W/mK. These results match the expected values [17] and validate the measurement system. Figure 6 shows the thickness dependent data of GST interfaced with Si 3 N 4 layers.…”

“…Swartz and Pohl [21] found the increasing disorder with film thickness from their thermal conductivity measurements of SiO 2 film. Ju et al [17] also found that the process dependent structural disorder affects the thermal conductivity of SiO 2 films. The dislocations and pores in amorphous solids have an opportunity to heal during the annealing process and can be responsible the reduced R defects found in the crystalline GST.…”

High-performance micro scale thermoelectric cooler: An optimized 6-stage cooler

“…The final important material parameter need for the simulation is thermal conductivity. Oxide thermal conductivity was based on measurements by Ju [8].…”

Extending the 3ω method for thin-film analysis to high frequencies

“…This value is well within the range 1.0 W m Ϫ1 K Ϫ1 ϽϽ1.4 W m Ϫ1 K Ϫ1 given in the literature for PECVD SiO 2 at room temperature. 7,11 Although there is a distinction between the values for 1 up to 8%, the quotient 1 /d 1 for the two heaters in each layer is equal to 2.5% and 0.3%. This is explained by the fact that the sum of squares to be minimized forms a long, gentle valley in the 1 -d 1 plane.…”