Structure Analysis of InN Film Using Extended X-Ray Absorption Fine Structure Method

Abstract

We investigated the local atomic structure around In atoms of MBE-grown InN which has a direct bandgap energy of 0.8 eV, using extended X-ray absorption fine structure (EXAFS) oscillation of In K-edge. The signals from the first-nearest neighbor atoms (N) and second-nearest atoms (In) from In atoms were clearly observed and the atomic bond length of In-N and In-In was estimated to be d In-N ¼ 0.215 nm and d In-In ¼ 0.353 nm, respectively. The In-N bond length of d In-In ¼ 0.353 nm was closed to the a-axis lattice constant of a ¼ 0.3536 nm, which was determined using X-ray diffraction measurements. The obtained local atomic structure agreed with the calculated ideal structure. We conclude, therefore, that the InN film with a bandgap energy of 0.8 eV has a high structural symmetry in the range of a few A around In atoms.

Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(111) and GaN templates by RF sputtering

“…This value is similar to the one obtained by Shinoda and Mutsukura [12] for InN samples deposited by RF sputtering on sapphire and glass substrates. The obtained c-lattice parameter is slightly above the theoretical one of 5.70Å for MBE samples [17], indicating that the samples are almost relaxed.…”

RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

“…Thus, the obtained local atomic structure agreed with the ideal structure of sp 3 hybridation bonds. 37) A series of data obtained by Hall-effect measurement are summarized in Fig. 17.…”

Band-GaP Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy

“…Figure 11 shows a high resolution lattice image of the typical InN/sapphire interface. The local atomic structure near In atom was investigated using EXAFS oscillation of the In K-edge [15]. On the other hand, as shown in figure 8, some voids with about 50 ~ 150 nm in diameter are observed at the interface.…”