Structurally Induced Optical Transitions in Ge-Si Superlattices

Pearsall, T. P.; Bevk, J.; Feldman, L. C.; Bonar, J. M.; Mannáerts, J. P.; Ourmazd, A.

doi:10.1103/physrevlett.58.1053

Cited by 15 publications

(11 citation statements)

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“…8. It can be seen that increasing the temperature results in an improvement of the film crystallinity, in good agreement with experiments [77][78][79]. BOP-based molecular dynamics simulations therefore provide a valuable tool to explore the detailed atomic assembly mechanisms during the growth of Si films.…”

Section: Si Growth Simulationsupporting

confidence: 71%

Analytic bond-order potentials for modelling the growth of semiconductor thin films

Drautz

Zhou

Murdick

et al. 2007

Progress in Materials Science

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Section: Si Growth Simulationsupporting

confidence: 71%

Analytic bond-order potentials for modelling the growth of semiconductor thin films

Drautz

Zhou

Murdick

et al. 2007

Progress in Materials Science

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“…107 and 108. The advantage of the strained SiGe quantum well over bulk silicon is the appearance of the direct optical transition through the so called non-phonon transition [1063][1064][1065]. Due to the non-phonon transition and its phonon replica [1065], radiative recombination in a SiGe quantum well is much faster than that in silicon.…”

Section: Spin Transport In Siliconmentioning

confidence: 98%

Spin dynamics in semiconductors

2010

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This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published in Physics Reports

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“…There are an infinite number of such pseudo-compounds, which provides the possibility of creating any desired bandgap energy. For quaternary alloys such as Ga x Al l-x P y As l-y , see Pearsall (1982). The conventional term alloy of metals also encompasses crystallite mixtures of nonintersoluble metals, such as lead and tin (solder).…”

Section: Bandgap Of Alloysmentioning

confidence: 99%

“…However, electrons are confined in AlAs for 3 < n < 10; only for n > 10 are electrons also confined in GaAs, as is expected for thicker superlattices with near-bulk gap properties for each layersee also (Kamimura and Nakayama 1987). For Si n Ge m ultrathin superlattices, see Pearsall et al (1987) and Froyen et al (1987).…”

Section: Ultrathin Superlatticesmentioning

confidence: 99%