Bands and Bandgaps in Solids

Böer, Karl W.; Pohl, Udo W.

doi:10.1007/978-3-319-06540-3_8-2

Cited by 2 publications

(4 citation statements)

References 101 publications

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“…LO and ω TO were achieved by determining the edge of Reststrahlen band, and ε ∞ was determined by analyzing the change trend of real part ε 1 at high frequency. According to SE experiments, it is found that the ε ∞ of GaN is almost temperature-independent with a value of 5.33, which is consistent with the 5 35. given by ref 26.…”

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confidence: 88%

Bandgap, Mobility, Dielectric Constant, and Baliga’s Figure of Merit of 4H-SiC, GaN, and β-Ga₂O₃ from 300 to 620 K

Cheng

Yang

Zheng

2022

ACS Appl. Electron. Mater.

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Bandgap, mobility, and dielectric constant are important parameters to measure the properties of an opto-electric semiconductor material. Here, this work evaluates the temperature dependence of these basic parameters of the third-generation wide-bandgap semiconductors including 4H-SiC, GaN, and β-Ga 2 O 3 , based on which Baliga's figure of merit (BFOM = ε r × μ × E g 3) is obtained correspondingly. Experimental results indicate that as temperature increases, compared with that of 4H-SiC and GaN, the bandgap of β-Ga 2 O 3 shows an obvious shrinkage due to the strong electron−phonon interaction, but the static dielectric constants of these three semiconductors do not show significant changes in a higher temperature range. At room temperature, the BFOM of 4H-SiC and GaN is more dominant, but as temperature increases, the BFOM of the three materials decreases significantly due to the notable reduction of mobility and bandgap, which finally approaches each other at high temperature. Based on the results achieved, this work is expected to provide reference concerning the basic parameters of the third-generation wide-bandgap semiconductors and the corresponding changes appearing in a higher temperature range (300−620 K).

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confidence: 88%

Bandgap, Mobility, Dielectric Constant, and Baliga’s Figure of Merit of 4H-SiC, GaN, and β-Ga₂O₃ from 300 to 620 K

Cheng

Yang

Zheng

2022

ACS Appl. Electron. Mater.

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“…E 0 is the band gap at 0 K, while α and β are empirical fitting parameters. 44 The wide use of the approximation in eq 1 is due to the complexity of the dependence of the band gap on temperature and the lack of a microscopic theory. Equation 1 fails to fit the specific PL(T) curve of CsPbBr 3 NCs (Figure 3b).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…It is impossible to create a universal equation to describe the temperature dependence of any band gap. 44 We have previously described the effects of temperature on PL linewidth and band gap in terms of phonon coupling. 34 The two main factors in the shift in band gap are thermal expansion of the lattice and electron−phonon interaction.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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The Temperature Dependence of the Photoluminescence of CsPbBr₃ Nanocrystals Reveals Phase Transitions and Homogeneous Linewidths

Strandell

Kambhampati

2021

J. Phys. Chem. C

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Semiconductor perovskites are known to be strongly coupled to a dynamically disordered lattice. Two key phenomena to consider are phase transitions and phonon contributions to homogeneous linewidths. Each of these parameters will be highly dependent on material parameters and would benefit from a simple measure. Here, we perform temperaturedependent photoluminescence spectroscopy on bulk CsPbBr 3 perovskite nanocrystals. The data reveals a discontinuity in the energy gap, suggesting a phase transition between orthorhombic and cubic phases. The temperature dependence of the linewidth reveals negligible coupling to the ligands but strong coupling to polar optical phonons via the Froḧlich coupling. This temperature dependence suggests that homogeneous line broadening dominates the observed linewidths.

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Bands and Bandgaps in Solids

Cited by 2 publications

References 101 publications

Bandgap, Mobility, Dielectric Constant, and Baliga’s Figure of Merit of 4H-SiC, GaN, and β-Ga₂O₃ from 300 to 620 K

Bandgap, Mobility, Dielectric Constant, and Baliga’s Figure of Merit of 4H-SiC, GaN, and β-Ga₂O₃ from 300 to 620 K

The Temperature Dependence of the Photoluminescence of CsPbBr₃ Nanocrystals Reveals Phase Transitions and Homogeneous Linewidths

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Bands and Bandgaps in Solids

Cited by 2 publications

References 101 publications

Bandgap, Mobility, Dielectric Constant, and Baliga’s Figure of Merit of 4H-SiC, GaN, and β-Ga2O3 from 300 to 620 K

Bandgap, Mobility, Dielectric Constant, and Baliga’s Figure of Merit of 4H-SiC, GaN, and β-Ga2O3 from 300 to 620 K

The Temperature Dependence of the Photoluminescence of CsPbBr3 Nanocrystals Reveals Phase Transitions and Homogeneous Linewidths

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Bandgap, Mobility, Dielectric Constant, and Baliga’s Figure of Merit of 4H-SiC, GaN, and β-Ga₂O₃ from 300 to 620 K

Bandgap, Mobility, Dielectric Constant, and Baliga’s Figure of Merit of 4H-SiC, GaN, and β-Ga₂O₃ from 300 to 620 K

The Temperature Dependence of the Photoluminescence of CsPbBr₃ Nanocrystals Reveals Phase Transitions and Homogeneous Linewidths