Structural transition of silicene on Ag(111)

Arafune, Ryuichi; Lin, Chun Liang; Kawahara, Kazuaki; Tsukahara, N.; Minamitani, Emi; Kim, Yousoo; Takagi, Noriaki; Kawai, Maki

doi:10.1016/j.susc.2012.10.022

Cited by 175 publications

(234 citation statements)

References 17 publications

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“…11,13,14,[21][22][23][24][25][26] Growth conditions, particularly substrate temperature, 26 determine which superstructure is obtained. Some ambiguity remains due in part to experimental characterization (e.g., scanning tunneling micrfoscopy) not associating a unique and well-defined structure to a given image.…”

Section: A Structurementioning

confidence: 99%

“…25 Moreover, a search for massless Dirac electrons via the generation of the quantum Hall effect turned out negative. 35 The latter experimental results have also received support from theoretical calculations, revealing a strong hybridization between the Si and Ag electronic states 35 and also others attaching the linear dispersion to an sp band origination from the silver.…”

Section: -36mentioning

confidence: 99%

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Is silicene the next graphene?

Voon

Guzmán-Verri

2014

MRS Bull.

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This article reviews silicene, a relatively new allotrope of silicon, which can also be viewed as the silicon version of graphene. Graphene is a two-dimensional material with unique electronic properties qualitatively different from those of standard semiconductors such as silicon. While many other two-dimensional materials are now being studied, our focus here is solely on silicene. We first discuss its synthesis and the challenges presented. Next, a survey of some of its physical properties is provided. Silicene shares many of the fascinating properties of graphene, such as the so-called Dirac electronic dispersion. The slightly different structure, however, leads to a few major differences compared to graphene, such as the ability to open a bandgap in the presence of an electric field or on a substrate, a key property for digital electronics applications. We conclude with a brief survey of some of the potential applications of silicene.

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Section: A Structurementioning

confidence: 99%

Section: -36mentioning

confidence: 99%

Is silicene the next graphene?

Voon

Guzmán-Verri

2014

MRS Bull.

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“…While the spin-polarization is generated by spin-orbit coupling (SOC), the entanglement between spin and orbital degrees of freedom due to the SOC significantly reduces the degree of spin-polarization of spin-split states in most non-magnetic semiconductors including the topological insulators 4 . Recently, silicene, a close relative of graphene 5 , has been predicted and synthesized [6][7][8][9][10][11][12][13][14][15][16] . The band structure of silicene is similar to that of graphene in that the conduction and valence edges occur at the corners (K and K' points) of the Brillouin zone (BZ).…”

mentioning

confidence: 99%

Gated silicene as a tunable source of nearly 100% spin-polarized electrons

et al. 2013

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Silicene is a one-atom-thick two-dimensional crystal of silicon with a hexagonal lattice structure that is related to that of graphene but with atomic bonds that are buckled rather than flat. This buckling confers advantages on silicene over graphene, because it should, in principle, generate both a band gap and polarized spin-states that can be controlled with a perpendicular electric field. Here we use first-principles calculations to show that field-gated silicene possesses two gapped Dirac cones exhibiting nearly 100% spin-polarization, situated at the corners of the Brillouin zone. Using this fact, we propose a design for a silicene-based spin-filter that should enable the spin-polarization of an output current to be switched electrically, without switching external magnetic fields. Our quantum transport calculations indicate that the proposed designs will be highly efficient (nearly 100% spin-polarization) and robust against weak disorder and edge imperfections. We also propose a Y-shaped spin/valley separator that produces spin-polarized current at two output terminals with opposite spins.

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“…The experimental progress demonstrates that single-and few-layer silicene can be synthesized by epitaxial growth on several substrates, e.g., Ag [23][24][25][26][27][28][29][30][31][32], Ir [33], and ZrB 2 [34]. The freestanding bilayer silicene (BS), which is more stable than single-layer silicene, has been predicted to be an ideal material for topological insulators or superconductors [35,36] and Li-ion storage [37].…”

mentioning

confidence: 99%

“…The freestanding bilayer silicene (BS), which is more stable than single-layer silicene, has been predicted to be an ideal material for topological insulators or superconductors [35,36] and Li-ion storage [37]. Although bilayer silicene has been synthesized in several experiments [24,26,[28][29][30][31][32], the ground-state structure of bilayer silicene, even in its freestanding form, is still under debate [35,[37][38][39].…”

mentioning

confidence: 99%

Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene

et al. 2014

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Silicon is arguably the best electronic material, but it is not a good optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS) shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable band gap. At low hydrogen concentrations, four ground states of single-and doublesided hydrogenated BS are characterized by dipole-allowed direct (or quasidirect) band gaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-sided hydrogenated BS structures exhibit direct (or quasidirect) band gaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, highefficiency, optoelectronic applications.

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Structural transition of silicene on Ag(111)

Cited by 175 publications

References 17 publications

Is silicene the next graphene?

Is silicene the next graphene?

Gated silicene as a tunable source of nearly 100% spin-polarized electrons

Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene

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