We theoretically investigate the structural, electronic and transport properties of bilayers silicene. Due to the large numbers of degrees of freedom permitted by the buckled structure of the silicene, its bilayer structure can present several possible stacking configurations. We show that in the lowest energy conformation, named AA p , the bilayer silicene looses its buckled structure becoming planar. This structural conformation is established since there is an energy gain if the system loses its π cloud to create extra (σ-like) chemical bonds between the two layers. Simulated STM images show excellent agreement with experimental STM images of bilayers silicene. We also analyze the 2D and 3D features of the band structure of the bilayers silicene. In particular, we show that the analysis of the 3D band structure is fundamental to a complete understanding of the electronic and transport properties in this material. Moreover, we show that different structures present distinct electronic and transport properties (I ds × V ds ), where for some stacks, we verify an anisotropic behavior of the current as a function of the direction of the applied bias.silicene-based devices, since their intrinsic properties, which are highly dependent of the stacking order, can present a directional dependence as well.