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Zakharov, Dmitri N.; Liliental‐Weber, Z.; Wagner, B.; Reitmeier, Z. J.; Preble, E. A.; Davis, R. F.

doi:10.1103/physrevb.71.235334

Cited by 206 publications

(171 citation statements)

References 27 publications

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“…However, it is most likely attributed to BSFs of type I 2 29 or prismatic stacking faults, 27,30 which can arise from folded BSFs with stair-rod dislocations at their intersections. 8,30 Now, as we mentioned above, there are high densities of stacking faults in our heteroepitaxial samples. Therefore, it is reasonable to assume that not only the GaN emission but also the QW emission is influenced by the stacking faults.…”

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confidence: 99%

“…[5][6][7] However, most of these structures were affected by high densities of threading dislocations (TDs) and basal plane stacking faults (BSFs), which are terminated by either prismatic stacking faults (PSFs) or partial dislocations. 8 While TDs are known to act as nonradiative recombination centers, BSFs are optically active since they can be considered as cubic (zincblende) ABC phases in the wurtzite ABAB stacking sequence. Such a structure forms a type-II heterojunction which may capture electrons and holes resulting in optical transitions below the wurtzite GaN bandgap energy.…”

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confidence: 99%

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Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Jönen

Rossów

Bremers

et al. 2011

Applied Physics Letters

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We report on the optical properties of m-plane GaInN/GaN quantum wells (QWs). We found that the emission energy of GaInN QWs grown on m-plane SiC is significantly lower than on nonpolar bulk GaN, which we attribute to the high density of stacking faults. Temperature and power dependent photoluminescence reveals that the GaInN QWs on SiC have almost as large internal quantum efficiencies as on bulk GaN despite the much higher defect density. Our results indicate that quantum-wire-like features formed by stacking faults intersecting the quantum wells provide a highly efficient light emission completely dominating the optical properties of the structures. V C 2011 American Institute of Physics. [doi:10.1063/1.3607301] In the past few years, GaN-based light emitting devices grown on non-polar planes have continuously attracted increasing attention due to their promising optical properties. While conventional structures grown on the polar c-plane suffer from the quantum-confined Stark effect (QCSE), 1 GaN layers grown on non-polar surfaces are free from polarization fields in growth direction. 2 The increased transition probability may result in an improved device efficiency leading to increased light output powers and/or reduced threshold current densities. 3 Indeed, the first GaInN based laser diodes with an emission wavelength at 500 nm have been shown by Okamoto et al. on m-plane GaN substrates. 4 However, up to now, non-polar GaN substrates are still barely available, small in size, and also very expensive. As an alternative, several groups have reported heteroepitaxial growth of non-polar GaN layers on foreign substrates (c-LiAlO 2 , SiC, r-plane sapphire). [5][6][7] However, most of these structures were affected by high densities of threading dislocations (TDs) and basal plane stacking faults (BSFs), which are terminated by either prismatic stacking faults (PSFs) or partial dislocations. 8 While TDs are known to act as nonradiative recombination centers, BSFs are optically active since they can be considered as cubic (zincblende) ABC phases in the wurtzite ABAB stacking sequence. Such a structure forms a type-II heterojunction which may capture electrons and holes resulting in optical transitions below the wurtzite GaN bandgap energy. 9-11 More recently, a BSF related emission from aplane GaN/AlGaN quantum well (QW) structures was reported, suggesting the formation of quantum-wire-like states in the regions where BSFs intersect the QWs. 12,13 In this paper, we investigate the optical properties of m-plane GaInN/GaN QW structures grown on silicon carbide (SiC). In particular, we show that stacking faults intersecting the QWs dominate the optical properties of these structures.Our samples were grown on m-plane 6H-SiC, m-plane bulk GaN substrates, and a-plane GaN templates (grown by hydride vapor phase epitaxy) in a low pressure metalorganic vapor phase epitaxy system with a horizontal reactor (Aixtron AIX 200RF). The precursors used were trimethylgallium, triethylgallium, trimethylaluminum, trimethylindium,...

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Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Jönen

Rossów

Bremers

et al. 2011

Applied Physics Letters

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“…Therefore, the significant reduction in BSF density in sample AG4 can be explained by the increase in the 3D-2D transition stage. Meanwhile, BSFs are found to be terminated by PDs or prismatic stacking faults (PSFs) [21]. In particular, BSFs are predominantly terminated by PDs because the density of PSFs (R = 1/2<1011>) formed on prismatic {1210} planes is much lower (~10 2 cm -1 ) than the density of PDs.…”

Section: Methodsmentioning

confidence: 99%

Effect of Basal-plane Stacking Faults on X-ray Diffraction of Non-polar (1120) a-plane GaN Films Grown on (1102) r-plane Sapphire Substrates

Kim¹,

Hwang²,

Baik³

et al. 2014

JSTS:Journal of Semiconductor Technology and Science

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“…In a wurtzite lattice four types of SFs (Zakharov et al, 2005), denoted I1, I2, I3 (intrinsic) and E (extrinsic), exist (see Fig. 4).…”

Section: Diffraction Simulationsmentioning

confidence: 99%

Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

Davtyan

Lehmann

Kriegner

et al. 2017

J Synchrotron Radiat

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Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the ½000 " 1 1 direction in the vicinity of the wurtzite 00 " 1 1 " 5 5 Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a single atomic bilayer. The positions of the fault planes are deduced from the positions and shapes of the maxima of the Patterson function and they are in excellent agreement with the positions found with transmission electron microscopy of the same nanowire.

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Structural TEM study of nonpolara-plane gallium nitride grown on(112¯0)4H

Cited by 206 publications

References 27 publications

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Effect of Basal-plane Stacking Faults on X-ray Diffraction of Non-polar (1120) a-plane GaN Films Grown on (1102) r-plane Sapphire Substrates

Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

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