Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing

Abstract

Abstract-Solid electrolytes based on chalcogenide glasses have been one of the most promising candidates for the next generation non-volatile memories. Here we propose a new application of chalcogenide solid electrolytes for low cost, high performance microelectronic radiation sensor that reacts to γ-radiation to produce an easily measurable change in electrical resistance. The active layer material is Ag-doped GeS thin film glasses and several compositions of GeS base glasses were tested for best resistive sensing capability. Energy-dispersive X-ray spectroscopy (EDS) was used for elemental analysis and Raman scattering spectroscopy was measured to determine the structural details and radiation induced structural changes. We also present initial electrical measurement results with test devices.

Reversible and irreversible resistance changes for gamma-ray irradiation in silver-diffused germanium telluride

“…Resistance variation due to the diffusion has been applied to compact radiation dosimeters, which have attracted great interest due to their potential for reactor dosimetry, radiation chemistry, and clinical dosimetry. Successful sensing over a wide range of absorbed doses between 10 3 Gy and 10 7 Gy was demonstrated in Ag-doped Ge-S and Ge-Se systems [7][8][9][10][11][12][13][14]. However, the studies focused on the resistance variation between before and after γ-ray irradiation.…”