Programmable metallization cells (PMCs) are emerging ReRAM devices exhibiting resistance switching due to cation transport in a solid-state electrolyte and redox reactions at the electrodes. Their non-volatility and low power requirements have led to increased interest in their development for non-volatile memory applications. Investigation of the total dose response of PMCs will contribute to our understanding of radiation induced effects in these novel memory devices as well as assess their suitability for use in ionizing radiation environments. This work investigates the impact of total ionizing dose on the switching characteristic of silver doped Ge30Se70 PMC memory devices. The results obtained show that the resistance switching characteristic of these cells which use a solid state electrolyte based on is not affected by a total dose exposure of up to 10 Mrad(Ge30Se70)
In this study we demonstrate the potential radiation sensing capabilities of a metal-chalcogenide glass (ChG) device. The lateral device senses radiation-induced migration of ions in germanium selenide glasses by measuring changes in electrical resistance between electrodes. These devices exhibit a high-resistance ‘OFF-state’ (~1012 Ω) before irradiation, but following irradiation with either 60 Co gamma-rays or UV light, their resistance drops to a low-resistance ‘ON-state’ (~1013 Ω). The devices have exhibited cyclical recovery with room temperature annealing of Ag doped ChG, which suggests potential use in reusable radiation sensor applications. Furthermore, the mechanisms of radiation-induced Ag/Ag+ transport and reactions in ChG are modeled using a finite element device simulator. The essential reactions captured by the simulator are radiation-induced carrier generation, combined with reduction/oxidation for both ionic and neutral Ag species in the chalcogenide film. The results provide strong qualitative evidence that finite element codes can simulate ionic transport reactions in the ChG and reveal plausible mechanisms for radiation-induced metal doping
Ge-chalcogenide films show various photo-induced changes, and silver photo-diffusion is one of them which attracts lots of interest. In this paper, we report how silver and Ge-chalcogenide layers in Ge 33 S 67 /Ag/Si substrate stacks change under light exposure in the depth by measuring timeresolved neutron reflectivity. It was found from the measurement that Ag ions diffuse all over the matrix Ge 33 S 67 layer once Ag dissolves into the layer. We also found that the surface was macroscopically deformed by the extended light exposure. Its structural origin was investigated by a scanning electron microscopy. Published by AIP Publishing. [http://dx
We explore the radiation induced effects in thin films from the Ge-Se to Ge-Te systems accompanied with silver radiation induced diffusion within these films, emphasizing two distinctive compositional representatives from both systems containing a high concentration of chalcogen or high concentration of Ge. The studies are conducted on blanket chalcogenide films or on device structures containing also a silver source. Data about the electrical conductivity as a function of the radiation dose were collected and discussed based on material characterization analysis. Raman Spectroscopy, X-ray Diffraction Spectroscopy, and Energy Dispersive X-ray Spectroscopy provided us with data about the structure, structural changes occurring as a result of radiation, molecular formations after Ag diffusion into the chalcogenide films, Ag lateral diffusion as a function of radiation and the level of oxidation of the studied films. Analysis of the electrical testing suggests application possibilities of the studied devices for radiation sensing for various conditions. V
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