Structural Studies of Tin-Doped Indium Oxide (ITO) and In4Sn3O12

Nadaud, Nicolas; Lequeux, Nicolas; Nanot, M.; Jové, J.; Roisnel, Thierry

doi:10.1006/jssc.1997.7613

Cited by 305 publications

(281 citation statements)

References 25 publications

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“…The texture of a material is determined by the relative growth rate for each of the crystallographic planes present at the surface [27]. Under normal conditions with high surface mobility, ITO will grow with a structure which is predominantly (222) oriented [28]. From these experiments, it was found that for high surface mobility conditions (heating the sample), a (400) texture develops.…”

Section: Discussionmentioning

confidence: 99%

Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

et al. 2011

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Section: Discussionmentioning

confidence: 99%

Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

et al. 2011

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“…1a& 1b, indium atoms, on both b and d sites, reside at the center of a distorted cube with the six corners occupied by oxygen atoms, while the remaining two corners are empty. In the case of the b sites, oxygen vacancies are located along the body diagonal; for the d site they are located along a face diagonal [41,42]. Figure 1c shows tin (Sn) doping sites in an indium oxide lattice, where the Sn atom occupies an interstitial site and contributes an electron (i.e., a donor), making the doped indium oxide into indium tin oxide.…”

Section: Indium Oxide and Tin Doped Indium Oxide Structurementioning

confidence: 99%

Indium-Tin-Oxide for High-performance Electro-optic Modulation

et al. 2015

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Advances in opto-electronics are often led by discovery and development of materials featuring unique properties. Recently, the material class of transparent conductive oxides (TCO) has attracted attention for active photonic devices on-chip. In particular, indium tin oxide (ITO) is found to have refractive index changes on the order of unity. This property makes it possible to achieve electrooptic modulation of sub-wavelength device scales, when thin ITO films are interfaced with optical light confinement techniques such as found in plasmonics; optical modes are compressed to nanometer scale to create strong light-matter interactions. Here we review efforts towards utilizing this novel material for high performance and ultra-compact modulation. While high performance metrics are achieved experimentally, there are open questions pertaining to the permittivity modulation mechanism of ITO. Finally, we review a variety of optical and electrical properties of ITO for different processing conditions, and show that ITO-based plasmonic electro-optic modulators have the potential to significantly outperform diffractionlimited devices.

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“…Two non-equivalent sites of In atoms in In2O3 crystal (Nadaud, Lequeux, Nanot, Jove, & Roisnel, 1998) The substitution doping of indium oxide with Sn which replaces the In 3+ atoms from cubic bixbyite structure of In 2 O 3 form the ITO (Nadaud et al, 1998;N. Yamada, Yasui, Li, & Nomura, 1999).…”

Section: Ito Crystal Structurementioning

confidence: 99%

The Review of Semiconductor Gas Sensor for Nox Detcting

Niyat¹,

Hadi²,

Abadi³

2016

TOJDAC

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During the last century, many semiconductor gas sensors have been presented based on various materials and technologies to detect gas components. Many of them are made to support human's life in different ways. In the last years, the number of sensors which can detect various gas species has increased dramatically especially with respect to global issues of environment and earth atmosphere, the necessity of those gas sensors which can detect air pollutants such as NO x gases in environment is felt. They are essentially required in order to control the systems of combustion exhausted from industry, stationary facilities and automobiles. So it is necessary for the scientists to design and fabricate the gas sensors which are of low cost, selective, sensitive, and accurate especially in low level concentrations of target gases, easy to process and of high recovery and response time, good electrical properties, and above all tunable structure at the nano scale. In this sense, this paper has presented various classifications of gas sensors and various semiconductor oxides for NO x detecting and their technology to convey a comprehensive idea about the semiconductor metals as well as metal oxides for NO x detecting along with their characteristics, structures etc. in order to clarify the future road map towards on the semiconductor materials for NO x detecting. Keywords: sensor, NO x gases, semiconductor, metal oxides INTRODUCTIONIn the last few decades, many studies have been focused on the semiconducting metal oxides which are known as effective gas sensing materials especially for NO x detecting due to their electrical conductivities which are open to change greatly with the changes of atmosphere (K. J. Choi & Jang, 2010;Comini et al., 2009;Fine, Cavanagh, Afonja, & Binions, 2010;Franke, Koplin, & Simon, 2006; Kanan, El-Kadri, Abu-Yousef, & Kanan, 2009; G Korotcenkov & Cho, 2011;J.-H. Lee, 2009;Tricoli, Righettoni, & Teleki, 2010;Wetchakun et al., 2011). The sensing characteristics of such sensors can be optimized by controlling their morphology, surface to volume ratio, and electrical properties. The developments in nanotechnology, fabrication methods, and synthesis provide a suitable atmosphere to construct those sensors with their mentioned sensing characteristics easier.

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Structural Studies of Tin-Doped Indium Oxide (ITO) and In4Sn3O12

Cited by 305 publications

References 25 publications

Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

Indium-Tin-Oxide for High-performance Electro-optic Modulation

The Review of Semiconductor Gas Sensor for Nox Detcting

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