Structural properties of InGaN/GaN/Al2O3 structure from reciprocal space mapping

Abstract

By using metal organic chemical vapor deposition technique, InGaN/GaN solar cell (SC) structure is deposited over sapphire (Al 2 O 3) wafer as GaN buffer and GaN epitaxial layers. Structural properties of InGaN/GaN/Al 2 O 3 SC structure is investigated by using high resolution X-ray diffraction technique dependent on In content. By using reciprocal space mapping, reciprocal space data are converted to w-θ data with a software. These w-θ data and full width at half maximum data are used for calculating lattice parameters. When compared with w-θ measurements in literature it is seen that especially a-lattice parameter is found very near to universal value from RSM. It is calculated as 3.2650 nm for sample A (S.A) GaN layer and 3.2570 nm for sample B (S.B) GaN layer on (105) asymmetric plane. Strain and stress calculations are made by using these lattice parameters. Strain and stress are calculated as 0.02363 and 8.6051 GPa for S.A GaN layer respectively. Other results are given in tables in the results and discussion section of this article. Edge, screw and mixed type dislocations are calculated as mosaic defects. All these calculations are made for two samples on (002) symmetric and (105) asymmetric planes. As a result it is seen that measurements by using RSM give more sensitive results. a-lattice parameter calculated with this technique is the best indicator of this result.

High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

“…This shift of the N 1s core level state to higher binding energy is attributed to N dangling bonds [58,59]. 102) planes of GaN, respectively [34,[60][61][62]. A small peak at 40.20 • corresponds to β-Ga 2 O 3 (402) and is consistent with the XPS analysis [63].…”

“…High-resolution XRD of the GaN TF is shown in Figure 4. Diffraction peaks are observed at 34.58 • and 48.25 • and correspond to the (002) and (102) planes of GaN, respectively[34,[60][61][62]. A small peak at 40.20 • corresponds to β-Ga 2 O 3 (402) and is consistent with the XPS analysis[63].…”

Structural, optical and electronic properties of low energy N ion implanted InGaN/GaN heterostructures

“…It was observed that the ω − 2θ and omega XRC diffraction pattern of asymmetric peak (1 0 −1 5) of InGaN layer lost its sharpness in the intensity and its symmetry deteriorated after implantation resulted in mixed asymmetric GaN and InGaN peaks. This type of tricking diffraction patterns can be resolved using RSM [12]. Additionally, mosaic defects with high accuracy can be investigated.…”