Structural properties of GaN films grown on sapphire by molecular beam epitaxy

Zhu, Qianke; Botchkarev, A.; Kim, W.; Aktaş, Özgür; Salvador, A.; Sverdlov, B.; Morkoç, H.; Tsen, S. C Y; Smith, David J.

doi:10.1063/1.115739

Cited by 54 publications

(19 citation statements)

References 1 publication

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“…It has also been reported in Ref. [22] that the edge dislocations related to the twist mosaic are the dominant dislocations type in hexagonal GaN grown by MOCVD on (00.1) sapphire. The near interfacial film/ substrate interface is characterized by a high density of dislocations.…”

Section: Resultsmentioning

confidence: 80%

Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire

Bchetnia

Touré

Lafford³

et al. 2007

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 80%

Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire

Bchetnia

Touré

Lafford³

et al. 2007

Journal of Crystal Growth

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“…1,2 Lattice-resolved images ( Figure 1C) and electron diffraction data ( Figure 1D) further show that the Mg-doped GaN NWs are single-crystal materials with a 〈0001〉 growth direction and lattice constants (a ) 0.319 and c ) 0.517 nm), in agreement with wurtzite GaN. 15 The GaN NW growth direction and orientation is consistent with epitaxial growth from the c-plane sapphire surface; this explanation agrees with results from previous thin film studies where GaN has been shown to grow epitaxially on c-plane sapphire. 16 In addition, energy-dispersive X-ray fluorescence (EDX) analysis of GaN NWs showed no Mg, although this is consistent with the instrument sensitivity (ca.…”

mentioning

confidence: 69%

Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices

et al. 2003

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Magnesium-doped gallium nitride nanowires have been synthesized via metal-catalyzed chemical vapor deposition. Nanowires prepared on c-plane sapphire substrates were found to grow normal to the substrate, and transmission electron microscopy studies demonstrated that the nanowires had single-crystal structures with a 〈0001〉 growth axis that is consistent with substrate epitaxy. Individual magnesium-doped gallium nitride nanowires configured as field-effect transistors exhibited systematic variations in two-terminal resistance as a function of magnesium dopant incorporation, and gate-dependent conductance measurements demonstrated that optimally doped nanowires were p-type with hole mobilities of ca. 12 cm 2 /V‚s. In addition, transport studies of crossed gallium nitride nanowire structures assembled from p-and n-type materials show that these junctions correspond to well-defined p−n diodes. In forward bias, the p−n crossed nanowire junctions also function as nanoscale UV-blue light emitting diodes. The new synthesis of p-type gallium nitride nanowire building blocks opens up significant potential for the assembly of nanoscale electronics and photonics.Semiconductor nanowires (NWs) have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. 1,2 A key feature of semiconductor NWs that has enabled much of their success has been the growth of materials with reproducible electronic properties, including the controlled incorporation of n-type and/or p-type dopants. [3][4][5] The ability to incorporate both pand n-type dopants in a single material system, called complementary doping, has been previously demonstrated in silicon (Si) 3,4 and indium phosphide (InP) 5 NWs and has opened up substantial opportunities for exploring nanodevice concepts. For example, p-type and n-type Si NWs have been used to assemble p-n diodes, bipolar transistors, and complementary inverters, 3,4 while p-and n-type InP NWs have been used to create p-n diodes that function as nanoscale near-infrared light-emitting diodes (LEDs). 5 Complementary doping has not been reported in other semiconductor NW materials, although these previous results for Si and InP NWs underscore how the availability of pand n-type materials can enable a wide-range of function. For example, there has been considerable interest in GaN NWs 6-8 since this wide band gap material has been used in conventional planar structures to fabricate UV-blue LEDs and lasers, 9 as well as a range of other high-performance electronic devices. 10 Studies of the electronic properties of GaN NWs show, however, that unintentionally doped materials are intrinsically n-type, 11,12 and thus alone preclude exploration of a wide-range of nanodevices based upon complementary materials. To overcome this limitation of available GaN NWs, we have previously used p-Si NWs and n-GaN NWs to assemble hetero p-n junctions and nano-LEDs, 11,13 although a limitation of using p-Si N...

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“…Apparently, pure AlN sublimation growth on the alloy seed improved the crystal quality significantly. The disparity between the FWHM of the symmetric and asymmetric peaks is commonly observed for nitride growth [14], [15], [16] and has been attributed to the presence in the nitride films of significantly more dislocations of edge type rather than screw type [16], [17]. A Raman spectrum recorded on the (0001) face of the AlN single crystal is presented in Figure 4.…”

Section: Pure Aln Growth and Characterizationmentioning

confidence: 99%

New Technique for Sublimation Growth of AlN Single Crystals

Shi

Liu

et al. 2001

MRS Internet j. nitride semicond. res.

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Single crystalline platelets of aluminum nitride (AlN) were successfully grown by a new technique. It consists of (1) depositing an AlN buffer layer on a SiC substrate by metal organic chemical vapor deposition (MOCVD) below 1100°C, (2) forming an (AlN)x(SiC)1−x alloy film on the AlN film by condensing vapors sublimated at a temperature of 1800°C from a source mixture of AlN-SiC powders, followed by (3) condensing vapors sublimated from a pure AlN source (at 1800°C). The necessity of the first two steps for the successful AlN sublimation growth on SiC substrate was illustrated by the initial nucleation studies of alloys on SiC substrates with and without MOCVD AlN buffer layers: an AlN MOCVD buffer layer leads to continuous, single grain growth mode; The (AlN)x(SiC)1−x alloy film reduces the crack density because its thermal expansion coefficient is intermediate between SiC and AlN. X-ray diffraction (XRD) and Raman spectroscopy studies indicated the high quality of the AlN single crystal.

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Structural properties of GaN films grown on sapphire by molecular beam epitaxy

Cited by 54 publications

References 1 publication

Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire

Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire

Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices

New Technique for Sublimation Growth of AlN Single Crystals

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