Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire

Bchetnia, A.; Touré, A.; Lafford, Tamzin; Benzarti, Z.; Halidou, I.; Habchi, M.M.; Jani, B. El

doi:10.1016/j.jcrysgro.2007.09.006

Cited by 32 publications

(29 citation statements)

References 34 publications

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“…These results agree with the results of other authors (Bchetnia et al [25]) who also reported that the carrier concentrations decrease with increasing the GaN film thicknesses.…”

Section: Electrical Measurements Resultssupporting

confidence: 93%

Effect of thickness on the structural and optical properties of GaN films grown on Si(111)

El‐Naggar

2011

J Mater Sci: Mater Electron

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GaN films with different thicknesses were grown on Si(111) substrates by Plasma-Assisted Molecular Beam Epitaxy (PA-MBE). The optical properties of the films were investigated using spectrophotometric measurements of the reflectance in the wavelength range 200-3,300 nm. With increasing film thickness, the refractive index (n) increased slightly, while the optical energy gap (E g ) changed with no specific trend. The structural properties of the grown films were studied at (002) reflections using two types of rocking curve measurements; normal rocking curve (x-scan) and triple axis rocking curve (x/2h-scan). The Full Width at Half Maximum (FWHM) of rocking curve decreased with increasing film thickness. Hall effect measurements showed that all the samples were n-type with carrier concentrations decreasing from 8.025 9 10 18 to 5.65 9 10 17 cm -3 , and mobility increasing from 14 to 110 cm 2 V -1 s -1 as increasing the film thickness from 590 to 1,420 nm, respectively. Photoluminescence (PL) spectra for the grown GaN films with different thicknesses were measured at room temperature. PL spectra for all the samples exhibited band edge (BE) emissions at peak energies of 3.24 eV, with peak intensities increased with increasing the film thickness.

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“…These results agree with the results of other authors (Bchetnia et al [25]) who also reported that the carrier concentrations decrease with increasing the GaN film thicknesses.…”

Section: Electrical Measurements Resultssupporting

confidence: 93%

Effect of thickness on the structural and optical properties of GaN films grown on Si(111)

El‐Naggar

2011

J Mater Sci: Mater Electron

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“…The FWHM for (1 102 ) plane of sample B was the smallest of the three samples. The 223 arcs for sample B is one of the best results that has been reported for the in-situ SiN x interlayer deposition method, noting that the thickness of our sample was only 2.5 μm [12]. However, it is shown in the Table 1 that the FWHMs for the (0002) reflections of the three samples were almost the same, indicating that the influence of the SiN x interlayer position on screw dislocation density is negligible.…”

Section: Resultssupporting

confidence: 52%

“…This method has been verified as a convenient and efficient way to reduce TDs to 10 7 -10 8 cm −2 in GaN grown on sapphire substrates [6][7][8][9][10][11][12][13][14][15]. The method has been used to improve the performance of devices such as blue and green LEDs, UV-LEDs, Schottky barrier photo-detectors, and metal-semiconductor-metal photo-detectors [16][17][18][19][20] …”

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confidence: 99%

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial films

Xing

Wang

et al. 2011

Chin. Sci. Bull.

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The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial film was elucidated from the behavior of dislocations. The best quality GaN film was achieved when a nanoporous SiN x interlayer was grown on a rough layer, with the high-resolution X-ray diffraction rocking curve full width at half maximum for ( 1102 ) reflection decreasing to 223 arcs, and the total dislocation density reduced to less than 1.0×10 8 cm −2. GaN films were grown on sapphire substrates by metal organic chemical vapor deposition. The quality of these films was investigated with high-resolution X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. A preference for the formation of half-loops to reduce threading dislocations was observed when an SiN x interlayer was grown on a rough layer. A growth mechanism is proposed to explain this preference.growth models, defects, metal-organic chemical vapor deposition, GaN, SiN x

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“…All layers investigated in this work are elaborated by metal organic vapour phase epitaxy (MOVPE) technique [1][2][3][4][5][6][7][8].…”

Section: Experimental Details and Theory Elementmentioning

confidence: 99%

High‐Resolution X‐Ray Diffraction of III–V Semiconductor Thin Films

Fitouri¹,

Habchi²,

Rebey³

2017

X-Ray Scattering

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In this chapter, we will address the structural characterization of III-V semiconductor thin films by means of HRXRD. We first give an overview on the basic experimental apparatus and theory element of this method. Subsequently, we treat several examples in order to determine the effect of doping, composition and strain on structural properties of crystal. Analysed layers were grown by metal organic vapour phase epitaxy (MOVPE). Films treated as examples are selected in order to bring the utility of characterization technique. Here, we investigate GaAs/GaAs(001), GaAs:C/GaAs(001), GaN/Si(1 11), GaN:Si/Al 2 O 3 (001), GaAsBi/GaAs(001) and InGaAs/GaAs(001) heterostructures by using different scans for studying numerous structural layers and substrate parameters. Different scan geometries, such as ω-scan, ω/2θ-scan and map cartography, are manipulated to determine tilt, deformation and dislocation density induced by mismatch between layer and substrate. This mismatch is originated from the difference between the chemical properties of two materials generated by doping or alloying. Such HRXRD measurements are explored through the angular spacing between peaks of the substrate and layer. The half of full width maximum (HFWM) of peak layer intensity is a crucial qualitative parameter giving information on defect density in the layer.

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Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire

Cited by 32 publications

References 34 publications

Effect of thickness on the structural and optical properties of GaN films grown on Si(111)

Effect of thickness on the structural and optical properties of GaN films grown on Si(111)

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial films

High‐Resolution X‐Ray Diffraction of III–V Semiconductor Thin Films

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