Structural properties of GaAs surfaces nitrided in hydrazine-sulfide solutions

Berkovits, V. L.; Masson, L.; Makarenko, I. V.; Ulin, V. P.

doi:10.1016/j.apsusc.2008.03.023

Cited by 9 publications

(12 citation statements)

References 10 publications

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“…The nitridation of GaAs surface is carried out by its wet treatment in the solution of hydrazine‐hydrate N 2 H 4 :H 2 O with addition of 0.001M of sodium sulfide Na 2 S. [ 14,16 ] This solution is found to have an alkaline character (pH≈13) and therefore to produce the undesirable surface microetching of GaAs crystal surface. [ 32 ] To eliminate the latter, into the hydrazine‐sulfide solution the hydrazine‐dihydrochloride N 2 H 4 :2HCl is added in amount that ensures lowering pH value down to 8. [ 22 ]…”

Section: Methodsmentioning

confidence: 99%

Polarization Spectroscopy of Anisotropic Plasmons in Self‐Oriented Nanoclusters of Gold on Monolayer of Nitrogen Atoms Chemisorbed at GaAs(001) Surface

Berkovits

Kosobukin

Ulin

et al. 2021

Physica Status Solidi (b)

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Herein, the formation of Au nanoclusters on nitridized GaAs(001) surface is described, as well as the structure diagnostics and spectroscopic studies which reveal a strong anisotropy of the plasmons localized on the clusters. Principal aspects of the work are the following. Technologically, structures of Au/N/GaAs are fabricated with a monolayer of nitrogen atoms chemisorbed preliminary onto GaAs substrate to prevent its reaction with subsequently deposited Au film. Annealing of the structures Au/N/GaAs results in the appearance of anisotropic nanoclusters of chemically clean gold on GaAs surface. Experimentally, the existence of in‐surface anisotropy of Au clusters is verified with the atomic force microscopy and it is investigated with the resonant optical spectroscopies of anisotropy reflectance and polarized reflection. All the methods are applied jointly for the detailed study of anisotropic plasmons revealed in gold nanocluster arrays. Theoretically, the plasmon‐conditioned features observed in optical polarized spectra are interpreted using an optical model of in‐surface anisotropic plasmons in Au nanospheroids. As a result, the macroscopic anisotropy and orientation of gold nanoclusters and their plasmons relative to the crystallographic axes of GaAs substrate are unambiguously established and reliably specified.

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Section: Methodsmentioning

confidence: 99%

Polarization Spectroscopy of Anisotropic Plasmons in Self‐Oriented Nanoclusters of Gold on Monolayer of Nitrogen Atoms Chemisorbed at GaAs(001) Surface

Berkovits

Kosobukin

Ulin

et al. 2021

Physica Status Solidi (b)

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“…For surface nitridation of GaAs crystals, wet chemical treatment in highly alkaline (pH ∼ 12) hydrazine-sulfide is conventionally used. , However, such treatment is known to produce surface microetching, which might remove a few monolayers of the GaAs material. , To avoid microetching and to prevent possible damage to the NW surface morphology, we used a low alkaline (pH ∼ 8.5) hydrazine-sulfide solution in which concentration of the OH– anions is intentionally decreased by 4 orders of magnitude and microetching becomes nearly impossible . Preparation of the solution included the two following stages.…”

mentioning

confidence: 99%

Nitride Surface Passivation of GaAs Nanowires: Impact on Surface State Density

et al. 2014

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Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

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“…This shows that OHions from the solution preferentially form bonds with surface gallium which can be subsequently desorbed, thus resulting in surface micro-etching. 9 Adsorption of OHanions is in competition with the bonding of hydrazine molecules with surface Ga atoms. In the same way as for OHadsorption, formation of a single Ga-N bond, according to Reaction (1) is reversible.…”

Section: /07/2009mentioning

confidence: 99%

“…For GaAs(001), addition of small amounts of sulfide enables the removal of surface arsenic thereby providing adsorption of the hydrazine molecules on surface Ga atoms. Soft treatments by hydrazine sulfide solutions thus lead to formation of ultra-thin, chemically stable, GaN layers which electronically and chemically passivate the surface for up to several years, 8,9 and are a potential alternative to plasma nitridation. 10,11 The chemical bonds established by the hydrazine-sulfide treatment on the (111)A and (111)B surfaces were analyzed using photoemission spectroscopy and low energy electron diffraction (LEED).…”

Section: /07/2009mentioning

confidence: 99%

“…9 Adsorption of OH -anions is in competition with the bonding of hydrazine molecules with surface Ga atoms. In the same way as for OH -adsorption, formation of a single Ga-N bond, according to Reaction (1) On the A surface, since Ga atoms have one dangling bond perpendicular to the surface, irreversible adsorption of nitrogen or sulfur atoms from electrolytes through multiple bond formation is not energetically possible.…”

Section: /07/2009mentioning

confidence: 99%

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GaAs(111)AandBsurfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes

et al. 2009

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Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 10 3 times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS -and OH -anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.

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Structural properties of GaAs surfaces nitrided in hydrazine-sulfide solutions

Cited by 9 publications

References 10 publications

Polarization Spectroscopy of Anisotropic Plasmons in Self‐Oriented Nanoclusters of Gold on Monolayer of Nitrogen Atoms Chemisorbed at GaAs(001) Surface

Polarization Spectroscopy of Anisotropic Plasmons in Self‐Oriented Nanoclusters of Gold on Monolayer of Nitrogen Atoms Chemisorbed at GaAs(001) Surface

Nitride Surface Passivation of GaAs Nanowires: Impact on Surface State Density

GaAs(111)AandBsurfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes

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