STRUCTURAL PROPERTIES OF AlN FILMS WITH OXYGEN CONTENT DEPOSITED BY REACTIVE MAGNETRON SPUTTERING: XRD AND XPS CHARACTERIZATION

Abstract

A set of aluminium nitride ( AlN ) and oxidized AlN ( AlNO ) thin films were grown with the technique of direct current (dc) reactive magnetron sputtering. The main purpose of this investigation is to explore the influence of the oxygen on the structural properties of AlN and AlNO films. The crystalline properties and chemical identification of phases were studied by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. Electrical properties were analyzed from I-V measurements. It was found that films crystallized under the AlN würzite structure and presented a polycrystalline preferential growth along [0001] direction, perpendicular to substrate. Small amounts of secondary aluminium oxide phases were detected too. The oxide phases can induce defects, which can alter crystallinity of films.

Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance

“…While none of the samples showed the presence of Al on the surface (green curve in Figure D), the AlN and AlO species had varying concentrations. There is a wide range of values available for such peaks in the literature, − the values from Alevli et al were taken as our starting point. On the basis of this, certain constraints to the values of AlO and Al peaks with respect to the AlN peak were assigned.…”

“…the AlN and AlO species had varying concentrations. There are a wide ranging of values available for such peaks in literature, [41][42][43][44][45][46][47][48] we have taken values from Alevli et al 47 as our starting point. Based on this, we have assigned certain constraints to the values of AlO and Al peaks with respect to AlN peak.…”

The Effects of Si Doping on the Endurance and Stability Improvement of AlN-Based Resistive Random Access Memory

“…The main peaks of AlN reveal the composition of Al–Al, Al–N, and Al–O. The binding energies of Al–Al, Al–N, and Al–O are 72.8, 74.1, and 74.7 eV, respectively. When the Si content in the AlN film increases, the ratio of Al–O and Al–N in the film has a downward trend.…”

Atomic layer engineering on resistive switching in sub-4 nm AlN resistive random access memory devices

“…The Al 2p XPS signals can be decomposed into the peaks corresponding to AlÀAl (72.8 eV), AlÀN (74.1 eV), and AlÀO (74.7 eV) bonds, respectively. 3,37,38 According to the literature, 3,39 the relative amount of nitrogen vacancies can be deduced from the AlÀAl content. Fig.…”